Applicability Analysis of High-Voltage Transmission and Substation Equipment Based on Silicon Carbide Devices

Power electronics is an important feature of the new power system. The high-speed development of the new power system has gradually increased the requirements for high-efficiency and high-reliability high-voltage transmission and substation equipment. Silicon carbide (SiC) devices, which have the advantages of fast switching speed, low power loss, and high-temperature resistance, are the key core technology for the upgrading of high-voltage transmission and substation equipment. The paper begins by examining the evolution of the demand for high efficiency, compact and reliable power electronic devices for high-voltage transmission and substation systems at different stages of energy development. SiC has emerged as a key technological path to break through the physical limits of silicon-based devices, due to its outstanding material properties. Silicon-based devices encounter significant bottlenecks in high-voltage and high-frequency applications, with high switching losses and a junction temperature tolerance that is typically limited to 150 °C. In contrast, SiC devices can reduce switching losses by 60-80% and operate stably at temperatures up to 200 °C or even higher, thereby significantly enhancing system efficiency and power density. Finally, the paper provides a systematic analysis of the application of SiC devices in high-voltage transmission and substation equipment, exploring and identifying the technical bottlenecks and future research directions for SiC-based high-voltage transmission equipment.