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Domain-Pair Intertwined Topological Domain Structures in Elemental Bi Monolayer.

Yunfei Hong1,2, Junkai Deng1, Yang Yang1

  • 1Xi'an Jiaotong University, State Key Laboratory for Mechanical Behavior of Materials, Xi'an 710049, China.

Physical Review Letters
|December 5, 2025
PubMed
Summary
This summary is machine-generated.

Stable charged 180° domain walls in bismuth monolayers form unique topological structures. These structures exhibit complex dynamics under strain, transforming and disintegrating at high tensile loads.

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Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Nanotechnology

Background:

  • Ferroelectric domain walls are crucial for material functionality.
  • Charged domain walls, particularly the stable 180° type in Bi monolayers, present novel research avenues.
  • Understanding their behavior is key to advanced electronic applications.

Purpose of the Study:

  • Investigate the finite-temperature dynamics of domain walls in Bi monolayers.
  • Characterize the topological structures and mechanical response of charged 180° domain walls.
  • Explore the behavior of these structures under varying tensile strain.

Main Methods:

  • Deep Potential Molecular Dynamics (DeePMD) simulations were employed.
  • Simulations focused on finite-temperature dynamics of domain walls.
  • Analysis involved subjecting domain wall structures to controlled mechanical loading (tensile strain).

Main Results:

  • Unique intertwined topological domain structures were discovered, involving charged 180° and conventional 90° domain walls.
  • These structures maintained topological integrity up to 4.70% tensile strain.
  • Beyond 9% strain, the topological structure disintegrated into parallel charged 180° domain walls.

Conclusions:

  • The study reveals unprecedented insights into the topological structures of charged 180° domain walls in Bi monolayers.
  • Complex reaction dynamics and transformations under mechanical load were observed.
  • Findings lay the groundwork for future research and potential applications in electronic devices.