Photonic and quantum thermometry using active resonator compound semiconductor photonic integrated circuits.

Area of Science:

• Materials Science
• Optical Engineering
• Semiconductor Physics

Background:

• Semiconductors are crucial for temperature sensing due to temperature-dependent optical and electronic properties.
• Silicon (Si) is widely used in electronics and photonics for optical sensors, but has limitations like poor light emission and fixed thermal properties.
• Compound semiconductors (e.g., InP, GaAs, GaN, InAs) possess direct band gaps for efficient light emission and tunable thermal properties via alloying.

Purpose of the Study:

• To explore the potential of indium phosphide (InP)-based alloys for advanced temperature sensing applications.
• To highlight the advantages of compound semiconductors for creating 'active resonator' temperature sensors with integrated light sources.
• To discuss the integration of InP-based alloys into quantum well heterostructures for micro-ring resonator designs.

Main Methods:

• Focus on the fundamental properties of InP-based alloys.
• Investigate the fabrication of micro-ring and other resonator designs using these alloys.
• Examine the integration of light sources within the sensor architecture.

Main Results:

• InP-based alloys show promise for active resonator temperature sensors.
• Integrated light sources enhance sensor simplicity and functionality.
• Tailored thermal properties allow customization for diverse temperature sensing ranges.

Conclusions:

• InP-based alloys are ideal for active resonator temperature sensors, overcoming silicon's limitations.
• Integrating light sources within InP-based micro-ring resonators enables versatile and functional temperature sensing.
• These advancements pave the way for novel temperature sensors across various applications.