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Updated: May 12, 2026
06:43
Writing and Low-Temperature Characterization of Oxide Nanostructures
Published on: July 18, 2014
Designing Extremely Low-Power Topological Transistors with 1T'-MoS2 and HZO for Cryogenic Applications.
Yosep Park1, Yungyeong Park2, Hyeonseok Choi2
1Department of Intelligent Semiconductor Engineering, Incheon National University, 119 Academy-ro, Yeonsu-gu, Incheon 22012, Republic of Korea.
Nano Letters
|February 2, 2026
Summary
We propose novel cryogenic topological transistors for quantum computing. These negative-capacitance topological insulator field-effect transistors (NC-TIFETs) significantly reduce power consumption in control electronics.
Area of Science:
- Quantum Computing
- Materials Science
- Solid State Physics
Background:
- Large-scale quantum computing necessitates advanced cryogenic electronic controllers.
- Current cryogenic technologies face significant power dissipation challenges, limiting qubit integration.
Purpose of the Study:
- To theoretically propose extremely low-power cryogenic topological transistors.
- To address power dissipation issues in quantum computing interfaces.
Main Methods:
- Theoretical proposal of negative-capacitance topological insulator field-effect transistors (NC-TIFETs).
- Utilizing a 2D 1T'-molybdenum disulfide (MoS2) topological channel.
- Employing a hafnium-zirconium oxide (HZO) ferroelectric gate insulator.
Main Results:
- NC-TIFETs demonstrate extremely steep-slope transfer curves.
- Ultrahigh transconductance achieved at low drain voltage (VD).
- Significant reduction in power dissipation is theoretically predicted.
Conclusions:
- NC-TIFETs are a promising solution for low-power cryogenic electronic interfaces.
- This technology can facilitate large-scale qubit integration in quantum computing systems.
- The proposed transistors minimize power dissipation essential for quantum systems.
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