Related Experiment Video
Updated: Feb 26, 2026

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
Published on: May 13, 2020
Integration of Polarization Sensing, Memory, and Logic in a Crystal-Axis-Aligned Oxygen-Intercalated Transistor
Shuimei Ding1,2, Chang Liu1,2, Lin Tang2
1State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha 410082, China.
Abstract:
The rapid development of data-centric applications requires the removal of interfaces between sensing, memory, and computing units to maximize system efficiency. Here, we report the direct integration of polarization-resolved photodetection, photocurrent memory, and optoelectronic logic within one transistor architecture. The transistor, termed the COT (crystal-axis-aligned oxygen-intercalated transistor), employs anisotropic PdSe2 as the contacts and anisotropic ReS2 as the channel with crystal-axis-aligned stacking to maximize polarization sensitivity, while introducing a nanoscale oxygen-trapping layer beneath the channel for persistent photocurrent memory. The synergistic photoresponse in the contacts and channel yields an ultrahigh responsivity of 5.2 × 107 A W-1 and a specific detectivity of 7.8 × 1015 cm Hz1/2 W-1. The confined oxygen enables an ultralong retention time of 6 × 104 s and 33 memory states. Due to the high polarization sensitivity, the device can further use different polarization vectors to realize reconfigurable optoelectronic logic gates, such as wavelength-tunable AND and OR.
Related Concept Videos
Biasing of P-N Junction
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
MOS Capacitor
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
Dielectric Polarization in a Capacitor
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Biasing of FET
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
Bipolar Junction Transistor

