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  1. Home
  3. In-silicon Mietronics For Flatband-enhanced Upconversion And Interfacial Loss Recovery.
  1. Home
  3. In-silicon Mietronics For Flatband-enhanced Upconversion And Interfacial Loss Recovery.

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In-Silicon Mietronics for Flatband-Enhanced Upconversion and Interfacial Loss Recovery.

Yuxiang Zhang1,2, Gianluigi Zito3, Yuyang Gu1

  • 1Department of Chemistry, National University of Singapore, Singapore 117543, Singapore.

Nano Letters
|March 2, 2026

View abstract on PubMed

Summary
This summary is machine-generated.

Researchers developed an inverted-index upconversion nanoparticle-silicon metasurface. This breakthrough enhances silicon photodetector infrared responsivity, enabling new applications in communications and imaging.

Keywords:
metasurfacesphotoinduced passivationsilicon photodetectionupconversion nanoparticles

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Photonics

Background:

  • Silicon (Si) photodetectors have limited infrared (IR) responsivity, hindering applications in communication, chemical sensing, and biomedical imaging.
  • Lanthanide-doped upconversion nanoparticles (UCNPs) can extend Si spectral response, but weak IR absorption and interfacial losses impede monolithic integration.

Purpose of the Study:

  • To overcome limitations of Si photodetectors by enhancing IR responsivity using UCNPs.
  • To develop an etch-free monolithic integration platform for UCNP-Si devices.

Main Methods:

  • Fabrication of an inverted-index UCNP-Si metasurface using low-index NaYF4:Yb/Er nanocylinders coated with high-index amorphous silicon.
  • Utilizing a collective-Mie flatband resonance at 976 nm for enhanced photon absorption and concentration.
  • Implementing near-field-mediated passivation to reduce interfacial loss channels.

    • Main Results:

    • Achieved near-unity absorption at 976 nm with a wide numerical aperture (NA ≈ 0.5).
    • Demonstrated a record 6800-fold increase in upconversion signal through resonant field enhancement and loss recovery.
    • Developed a fully etch-free platform compatible with complementary metal-oxide-semiconductor (CMOS) processing.

    Conclusions:

    • The UCNP-Si metasurface significantly enhances upconversion efficiency in silicon.
    • This platform offers a scalable solution for advanced silicon photodetectors and compact light sources.
    • The etch-free integration method is compatible with existing semiconductor manufacturing processes.