Related Experiment Video
Updated: Mar 4, 2026
10:45
Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing
Published on: August 29, 2025
774
Long-Term Operational Stability of Dual-Gated ITO/HfO2 Field-Effect Transistors via Full Top-Gate Coverage: A
Jianming Huang1, Arijit Sarkar2, Yajing Chai1
1Laboratory of 2D Optoelectronics and Nanoelectronics (L2DON), Department of Materials Science and Engineering, Southern University of Science and Technology, 1088 Xueyuan Blvd, Shenzhen 518055, China.
ACS Nano
|March 2, 2026
Summary
Stable indium tin oxide (ITO) field-effect transistors (FETs) were developed using hafnium dioxide (HfO2) gate insulators. These devices demonstrate excellent performance and long-term stability, crucial for integrated electronics.
Area of Science:
- Materials Science
- Semiconductor Physics
- Device Engineering
Background:
- Indium tin oxide (ITO) is a key material for thin-film transistors (TFTs).
- Achieving stable, high-performance gate stacks for ITO-based field-effect transistors (FETs) is a significant challenge for monolithic 3D integration.
- Existing ITO FETs often suffer from poor long-term operational stability and hysteresis.
Purpose of the Study:
- To develop fully scalable, dual-gated ITO FETs with enhanced stability and performance.
- To investigate the use of hafnium dioxide (HfO2) as a gate insulator for ITO FETs.
- To address the critical challenge of long-term bias stability in ITO-based devices.
Main Methods:
- Fabrication of dual-gated ITO FETs utilizing HfO2 gate insulators.
- Characterization of device performance, including ON/OFF ratio, gate bias turn-off, and threshold voltage stability.
- Long-term bias stress testing under various environmental conditions (ambient, light) and elevated temperatures.
Main Results:
- Demonstrated ITO FETs that turn off at zero gate bias with an ON/OFF ratio of 10^7 at 3 V.
- Achieved high long-term bias stability with minimal hysteresis and threshold voltage drift (tens of millivolts over tens of kiloseconds).
- Suppressed negative threshold voltage drift under positive gate bias up to 85 °C, maintaining performance under ambient and light conditions.
Conclusions:
- The developed HfO2-based ITO FETs exhibit superior stability and performance, comparable to CMOS-compatible devices.
- The observed stability is attributed to the full metal coverage of the top-gate oxide and the energetic alignment of HfO2 defect bands with ITO.
- These findings suggest ITO FETs offer a viable pathway for achieving Si-grade reliability, potentially outperforming other emerging platforms like MoS2/HfO2.
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