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Iodide-Coated CsPbBr3 Perovskite Nanowires for Resistive-Switching Memory in Neuromorphic Systems and Edge Computing
Jooyoung Uhm1, Yongjin Byun2, Seungman Park2
1School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do 16419, South Korea.
Nano Letters
|March 3, 2026
Summary
This study presents a new perovskite nanowire platform for high-performance memristors, enabling efficient brain-inspired computing. These devices show promise for next-generation, energy-efficient intelligent hardware and neuromorphic applications.
Area of Science:
- Materials Science
- Nanotechnology
- Computer Engineering
Background:
- The von Neumann architecture struggles with large-scale parallel processing demands of data-driven technologies.
- Neuromorphic computing, utilizing synaptic memory elements, presents a viable alternative for efficient computation.
- Perovskite materials offer potential for advanced electronic devices due to their tunable properties.
Purpose of the Study:
- To develop a high-performance memristor platform using engineered perovskite nanowires (PNWs) for neuromorphic computing.
- To investigate the impact of surface engineering on the stability and functionality of CsPbBr3 PNW memristors.
- To demonstrate the potential of these memristors for brain-inspired computing and edge AI applications.
Main Methods:
- Surface engineering of CsPbBr3 perovskite nanowires (PNWs) by removing insulating ligands and applying iodide passivation.
- Fabrication and characterization of memristor devices based on the engineered PNWs.
- Evaluation of device performance, including switching characteristics, multilevel conductance, and synaptic plasticity.
- Testing of brain-inspired functions like time-dependent plasticity and Pavlovian learning.
- Assessment of performance on the EMNIST dataset and for low-latency edge computing.
Main Results:
- The surface-engineered CsPbBr3 PNWs exhibited reliable bipolar switching and stable filament formation.
- Devices demonstrated multilevel conductance, robust potentiation/depression, and key brain-inspired functions.
- Achieved 91.6% recognition accuracy on the EMNIST dataset.
- Enabled low-latency 4-bit edge computing, showcasing energy efficiency.
- Suppressed bromide-related defects through surface modification, enhancing device stability.
Conclusions:
- Colloidal CsPbBr3 PNWs, through surface engineering, provide a scalable and high-performance platform for memristors.
- These memristors are suitable for next-generation neuromorphic applications, offering energy-efficient intelligent hardware solutions.
- The developed platform addresses limitations of current architectures for advanced AI processing.
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