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Updated: Jul 10, 2026

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3D Depth Profile Reconstruction of Segregated Impurities Using Secondary Ion Mass Spectrometry
Published on: April 29, 2020
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AI-driven feature recognition of SEM profiles in deep reactive ion etching based on physics-constrained variational
Fang Wang1,2, Hao Yu1,2, Yechen Miao1,2
1State Key Laboratory of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China.
Microsystems & Nanoengineering
|March 10, 2026
Summary
A new physics-constrained AI model, VLSet-AE, automates scanning electron microscopy analysis for deep reactive ion etching (DRIE) in microelectromechanical systems (MEMS). This method significantly improves accuracy and efficiency for intelligent microfabrication.
Area of Science:
- Materials Science and Engineering
- Artificial Intelligence in Manufacturing
- Semiconductor Fabrication
Background:
- Deep reactive ion etching (DRIE) is crucial for microelectromechanical systems (MEMS) but faces optimization challenges due to its complex, parameter-dependent nature.
- Current scanning electron microscopy (SEM) analysis for DRIE outcomes is labor-intensive, prone to errors (15-20%), and hinders high-throughput manufacturing.
- Existing automated methods struggle with accuracy (70-80%) in noisy SEM images and fail to capture the dynamic evolution of etched structures.
Purpose of the Study:
- To develop an automated SEM sectional-profile analysis method for DRIE processes.
- To address the limitations of manual and existing automated SEM analysis in terms of accuracy, efficiency, and data acquisition for AI-driven optimization.
- To enable precise extraction of critical dimensions from DRIE profiles for improved process control and manufacturing.
Main Methods:
- Proposed a physics-constrained variational level set autoencoder (VLSet-AE) for automated SEM sectional-profile analysis.
- Integrated physical etching constraints and a three-dimensional framework (time, linewidth, etching depth) into the VLSet-AE model.
- Evaluated VLSet-AE's performance against manual annotation and state-of-the-art models using key dimensional metrics and computational efficiency.
Main Results:
- VLSet-AE achieved high accuracy in extracting nine critical dimensions, with an average error of 3.65% and an overall model accuracy of 94.3%.
- The model significantly outperformed manual annotation and current alternatives in accuracy and efficiency.
- VLSet-AE demonstrated the shortest training time (20s), fastest inference time (1.2s), and highest recognition accuracy (96%) compared to seven other models.
Conclusions:
- VLSet-AE provides an efficient and accurate solution for automated SEM analysis in DRIE processes, enabling large-scale data acquisition for AI-optimized manufacturing.
- This physics-constrained AI approach empowers scalable, intelligent manufacturing and unlocks the potential for advanced microfabrication technologies.
- The study presents a forward-looking framework for AI-driven MEMS process design and manufacturing, paving the way for future AI-assisted microfabrication advancements.
Keywords:
AI for micro-fabricationDeep reactive ion etchingPattern recognitionPhysics-informed neural networksScanning electron microscopy image recognitionVariational autoencoderMore Related Videos
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