AI-driven feature recognition of SEM profiles in deep reactive ion etching based on physics-constrained variational

Fang Wang1,2, Hao Yu1,2, Yechen Miao1,2

  • 1State Key Laboratory of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China.

PubMed
Summary

A new physics-constrained AI model, VLSet-AE, automates scanning electron microscopy analysis for deep reactive ion etching (DRIE) in microelectromechanical systems (MEMS). This method significantly improves accuracy and efficiency for intelligent microfabrication.