Related Experiment Video
Updated: May 13, 2026
07:50
A Fabrication Method for Highly Stretchable Conductors with Silver Nanowires
Published on: January 21, 2016
10.4K
Intrinsically Stretchable Vertical Organic Electrochemical Transistor Featuring Sub-Nanometer-Roughness Electrodes
Shang Lu1, Jieming Wu2, Bangzhe Zhang2
1School of Electronic Science & Engineering, Southeast University, 2 Southeast University Road, Jiangning, Nanjing, Jiangsu 211189, China.
Nano Letters
|March 13, 2026
Summary
This study presents intrinsically stretchable organic electrochemical transistors (S-OECTs) with high performance under 100% strain. These devices show promise for advanced wearable neuromorphic electronics.
Area of Science:
- Materials Science
- Electronics Engineering
- Neuroscience
Background:
- Stretchable organic electrochemical transistors (S-OECTs) offer high transconductance and mechanical compliance.
- Achieving stable high performance under large strain remains a significant challenge for S-OECTs.
Purpose of the Study:
- To demonstrate intrinsically stretchable vertical OECTs with high transconductance and stable performance under large strain.
- To explore the potential of these S-OECTs in neuromorphic computing applications.
Main Methods:
- Fabrication of S-OECTs using a smooth stretchable bilayer electrode (evaporated Au and Ag NWs) and a stretchable organic semiconductor.
- Characterization of device performance, including transconductance and stretchability.
- Evaluation of synaptic functionalities and reservoir computing capabilities under 100% strain.
Main Results:
- Achieved high transconductance (∼55 mS) and 100% stretchability.
- Demonstrated rich synaptic functionalities with a high paired-pulse facilitation index (319.82%) under 100% strain.
- A reservoir computing network achieved 91.76% accuracy in handwritten digit recognition under 100% strain.
Conclusions:
- The developed S-OECTs overcome limitations in stretchable electronics, offering high performance and stability.
- These devices show significant potential for developing next-generation wearable neuromorphic electronic systems.
