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Related Concept Videos

Imperfections in Crystal Structure: Non-Stoichiometric Defects01:29

Imperfections in Crystal Structure: Non-Stoichiometric Defects

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Non-stoichiometric defects refer to a type of defect in the crystal structure of a compound where the ratio of its constituent elements deviates from the ideal stoichiometric ratio. There are two main types of non-stoichiometric defects: metal excess defects and metal deficiency defects.Metal excess defects occur when there is a slight surplus of metal ions than what is required by the stoichiometric ratio of the compound. For example, heating a sodium chloride crystal in sodium vapor results...
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Imperfections in Crystal Structure: Stoichiometric Point Defects01:26

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Schottky defects arise when some lattice points in a crystal, such as those in NaCl, remain unoccupied, creating lattice vacancies without disturbing the overall electrical neutrality of the crystal. This defect is common in ionic crystals where the positive and negative ions are similar in size, as seen in sodium chloride and cesium chloride. The presence of Schottky defects enables the crystal to conduct electricity to a small extent through an ionic mechanism. Electric fields cause nearby...
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Imperfections in Crystal Structure: Point, Line and Plane Defects01:25

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A perfect crystal, in theory, has a uniform structure with the same unit cell and lattice points throughout. However, any deviation from this periodic arrangement is known as an imperfection or defect. These defects can be categorized into three types: point, line, and plane defects.Point defects occur when there is a deviation from the ideal due to missing atoms, displaced atoms, or additional atoms. These imperfections might occur due to imperfect packing during crystallization or because of...
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Defect Engineering in Atomic-Layer-Deposited Cerium Oxide.

Rudi Tschammer1, Marcel Schmickler2,3, Yuliia Kosto1,4

  • 1Applied Physics and Semiconductor Spectroscopy, BTU Cottbus-Senftenberg, Cottbus 03046, Germany.

ACS Applied Materials & Interfaces
|March 16, 2026
PubMed
Summary
This summary is machine-generated.

Atomic layer deposition (ALD) enables defect engineering in cerium oxide films. Researchers tuned oxygen vacancies by varying the oxygen source, substrate, and thickness, controlling film properties for catalysis.

Keywords:
X-ray photoelectron spectroscopyatomic layer depositioncerium oxidedefect engineeringinelastic peak shape analysisultrathin films

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Area of Science:

  • Materials Science
  • Surface Chemistry
  • Nanotechnology

Background:

  • Atomic Layer Deposition (ALD) is a powerful technique for creating ultrathin films with precise control.
  • Defect engineering, particularly controlling oxygen vacancies, is crucial for enhancing catalytic activity in metal oxides.
  • Cerium oxide (ceria) is a widely studied material for catalytic applications due to its redox properties.

Purpose of the Study:

  • To explore ALD for defect engineering of catalytically active ultrathin cerium oxide deposits.
  • To demonstrate tuning of the oxygen/cerium (O/Ce) ratio in ceria films via thermal ALD.
  • To investigate the influence of coreactants, substrates, and film thickness on defect formation and film morphology.

Main Methods:

  • Thermal Atomic Layer Deposition (ALD) using tris(N, N'-diisopropyl-2-dimethylamido-guanidinato)cerium(III) ([Ce(dpdmg)3]) precursor.
  • Utilized H2O, O2, or O3 as coreactants for growing ceria films on silicon-based or alumina substrates.
  • Employed in situ X-ray photoelectron spectroscopy (XPS) to analyze Ce3+ concentration (oxygen vacancies).

Main Results:

  • Ce3+ concentration (oxygen vacancies) strongly depends on oxygen source, substrate, and film thickness.
  • Interface formation (silicates, aluminates) significantly impacts early-stage Ce3+ fixation.
  • For films >5 nm, oxygen vacancies are coreactant-dependent, and morphology is tunable by the oxygen source, enabling nanoisland formation.
  • ALD reaction mechanism shifts from ligand exchange (H2O) to ligand combustion (O3) with increasing cycles.

Conclusions:

  • ALD offers precise control over defect engineering in ultrathin ceria films.
  • The O/Ce ratio and oxygen vacancy concentration can be tailored by selecting appropriate ALD parameters (coreactant, substrate, thickness).
  • Morphological and chemical tuning via ALD provides pathways for surface functionalization and optimized catalytic performance.