Ultralow-Barrier Antiferroelectric-Ferroelectric Transition Enabled by Competing Polar Distortion in Two-Dimensional

Shuyi Lin1, Qiong Lei2, Jun Yin1

  • 1Department of Applied Physics, Research Center for Organic Electronics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, 999077, China.

Nano Letters
|April 8, 2026
PubMed
Summary

Two-dimensional nitride perovskites like La2WN4 exhibit low-energy ferroelectric and antiferroelectric switching. This material shows potential for low-power applications due to its tunable polarization and stable monolayer form.