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Ultralow-Barrier Antiferroelectric-Ferroelectric Transition Enabled by Competing Polar Distortion in Two-Dimensional
Shuyi Lin1, Qiong Lei2, Jun Yin1
1Department of Applied Physics, Research Center for Organic Electronics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, 999077, China.
Two-dimensional nitride perovskites like La2WN4 exhibit low-energy ferroelectric and antiferroelectric switching. This material shows potential for low-power applications due to its tunable polarization and stable monolayer form.
Area of Science:
- Materials Science
- Solid State Physics
- Computational Chemistry
Background:
- Two-dimensional (2D) Ruddlesden-Popper (RP) nitride perovskites offer unique properties for low-energy polarization control.
- Their reduced dimensionality and weak interlayer coupling are key to novel electronic functionalities.
Purpose of the Study:
- Investigate the ferroelectric (FE) and antiferroelectric (AFE) properties of the 2D RP nitride perovskite La2WN4.
- Explore the mechanisms of polarization switching and the impact of external stimuli.
Main Methods:
- Utilized first-principles calculations for theoretical analysis.
- Employed symmetry analysis and mode decomposition to understand structural and polarization behavior.
Main Results:
- Identified competing semiconducting FE (Aba2) and AFE (Pna21) phases in La2WN4.
- Demonstrated low energy barriers for AFE-FE interconversion and polarization reversal.
- Showcased reversible AFE/FE switching via 1% biaxial compressive strain or an in-plane electric field (0.025 V/Å).
- Confirmed exfoliation into a stable monolayer with sizable in-plane polarization and low switching barrier.
Conclusions:
- La2WN4 exhibits promising characteristics for fast, energy-efficient polarization switching.
- External stimuli effectively control the AFE/FE states.
- The stable monolayer form holds potential for low-power-programmable AFE/FE devices.
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