Towards Artificial Intelligence Hardware With 3D Integrated Ferroelectric Transistors.

Hyunho Seok1,2,3, Geonwook Kim4, Sihoon Son2,3

  • 1Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts, USA.

Summary

Researchers developed a monolithic 3D integration platform using Indium Gallium Zinc Oxide (IGZO) and Hafnium Zirconium Oxide (HZO) ferroelectric field-effect transistors (FeFETs). This novel hardware accelerates artificial intelligence (AI) by enabling efficient compute-in-memory and neuromorphic computing.

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