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    We developed a low-loss, low-power Indium Phosphide (InP) Metal-Oxide-Semiconductor Capacitor (MOSCAP) optical phase shifter. This device achieves efficient modulation with minimal optical loss and power consumption.

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    Area of Science:

    • Photonics
    • Semiconductor Devices
    • Optical Communications

    Background:

    • Optical phase shifters are crucial components in photonic integrated circuits.
    • Existing devices often face trade-offs between performance (modulation efficiency, loss) and power consumption.
    • Indium Phosphide (InP) offers favorable material properties for optoelectronic applications.

    Purpose of the Study:

    • To demonstrate a novel InP MOSCAP optical phase shifter.
    • To achieve high modulation efficiency with low optical loss and low power consumption.
    • To investigate the impact of a thick gate oxide on device performance.

    Main Methods:

    • Fabrication of a MOSCAP structure using an InP membrane waveguide and a thick gate oxide.
    • Modulation of the refractive index via voltage-induced electron accumulation at the InP surface.
    • Characterization of modulation efficiency, optical loss, and power consumption.

    Main Results:

    • Achieved a modulation efficiency (Vπ·L) of 1.08 V·cm.
    • Obtained a low additional optical loss of 0.27 dB/π.
    • Demonstrated low power operation of 11.5 pW/π, attributed to the thick gate oxide suppressing leakage current.

    Conclusions:

    • The demonstrated InP MOSCAP optical phase shifter offers a promising solution for low-loss, low-power photonic integrated circuits.
    • The use of a thick gate oxide effectively suppresses leakage current, enabling efficient and low-power operation.
    • The device leverages the large electro-optic effect and low free carrier absorption in InP for high performance.