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Related Concept Videos

Atomic Force Microscopy01:08

Atomic Force Microscopy

Atomic force microscopy (AFM) is a type of scanning probe microscopy that can analyze topographic details of various specimens like ceramics, glass, polymers, and biological samples. AFM offers over 1000 times more resolution than the optical imaging system. Images generated from AFM are three-dimensional surface profiles, offering an advantage over the flat, two-dimensional images from other imaging techniques.
The AFM Probe
The probe is regarded as the heart of any AFM setup and comprises the...

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Related Experiment Video

Updated: May 28, 2026

Active Probe Atomic Force Microscopy with Quattro-Parallel Cantilever Arrays for High-Throughput Large-Scale Sample Inspection
05:04

Active Probe Atomic Force Microscopy with Quattro-Parallel Cantilever Arrays for High-Throughput Large-Scale Sample Inspection

Published on: June 13, 2023

Atomic Force Microscopy (AFM)-Based Metrology for Advanced Etching in Three-Dimensional Integrated Circuits.

Jing Chang1, Shixuan Wang2, Shizhen Liang1

  • 1College of Chemistry and Chemical Engineering, Xi'an University of Science and Technology, Xi'an 710054, China.

Micromachines
|May 27, 2026
PubMed
Summary
This summary is machine-generated.

Atomic force microscopy (AFM) is crucial for advanced etching in three-dimensional integrated circuits (3D ICs). This technique enables precise nanoscale measurements for critical processes like through-silicon via etching and atomic layer etching.

Keywords:
atomic force microscopy (AFM)etching technologiessemiconductor metrologythree-dimensional integrated circuits (3D ICs)

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Last Updated: May 28, 2026

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Semiconductor Manufacturing

Background:

  • The
  • More than Moore
  • era necessitates advanced semiconductor manufacturing techniques.
  • Three-dimensional integrated circuits (3D ICs) are key to next-generation electronics, demanding high-precision etching.
  • Traditional metrology struggles with the nanoscale, 3D requirements of 3D IC etching.

Purpose of the Study:

  • To review the critical role of Atomic Force Microscopy (AFM) in advancing 3D IC etching processes.
  • To highlight AFM's capabilities in nanoscale, non-destructive characterization for 3D structures.
  • To discuss innovations and future directions for AFM in semiconductor manufacturing.

Main Methods:

  • Systematic review of Atomic Force Microscopy (AFM) applications in 3D IC etching.
  • Examination of AFM's use in deep reactive ion etching (DRIE) of through-silicon vias (TSVs).
  • Analysis of AFM's role in atomic layer etching (ALE) and cryogenic plasma etching.

Main Results:

  • AFM provides essential non-destructive, sub-nanometer characterization for 3D ICs.
  • AFM quantifies sidewall roughness, verifies etch rates, and assesses surface damage with high precision.
  • Innovations like tilting-AFM and HAR probes enhance throughput and access to deep features.

Conclusions:

  • AFM is indispensable for developing and optimizing etching processes in 3D IC manufacturing.
  • Integration of AFM with AI and modeling promises autonomous process control.
  • AFM's capabilities are vital for meeting the stringent demands of next-generation electronics.