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Related Concept Videos

P-N junction01:11

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
Electrostatic Boundary Conditions in Dielectrics01:27

Electrostatic Boundary Conditions in Dielectrics

When an electric field passes from one homogeneous medium to another, crossing the boundary between the two mediums imparts a discontinuity in the electric field. This results in electrostatic boundary conditions that depend on the type of mediums the field propagates through.
Consider a case where both the mediums across a boundary are two different dielectric materials. Recall that the electric field and electric displacement are proportional and related through the material's permittivity.
MOSFET: Depletion Mode01:20

MOSFET: Depletion Mode

Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
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Non-ohmic Devices00:51

Non-ohmic Devices

In most substances, the current flow is proportional to the voltage applied to it. A simple relationship between the values of current, voltage, and resistance is known as Ohm's law. Nonohmic devices do not exhibit a linear relationship between voltage and current. One such device is the semiconducting circuit element known as a diode. A diode is a circuit device that allows current flow in only one direction.
Consider a simple circuit consisting of a battery, a diode, and a resistor. A diode...
Electrical Current01:10

Electrical Current

Electrical current is defined as the rate at which charge flows. When there is a large current present, such as that used to run a refrigerator, a large amount of charge moves through the wire in a small amount of time. If the current is small, such as that used to operate a handheld calculator, a small amount of charge moves through the circuit over a long period of time. The SI unit for current is the ampere (A), named for the French physicist André-Marie Ampère (1775–1836). An ampere is the...
Carrier Generation and Recombination01:22

Carrier Generation and Recombination

Carrier generation is the process by which electron-hole pairs (EHPs) are created within the semiconductor. In direct-bandgap semiconductors, such as gallium arsenide (GaAs), this occurs efficiently when energy absorption prompts valence electrons to leap into the conduction band, leaving behind holes.
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Updated: May 29, 2026

In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices
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In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices

Published on: June 26, 2015

Electrical Physically Unclonable Function via Stochastic-Defect-Driven Invisible Current Pathways.

Changgyun Moon1, Seonghoon Jeong1, Joo-On Oh1

  • 1School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do 16419, Republic of Korea.

ACS Applied Materials & Interfaces
|May 27, 2026
PubMed
Summary
This summary is machine-generated.

This study introduces a novel breakdown (B.D.) fingerprint for secure authentication, offering a robust and lightweight Physically Unclonable Function (PUF) solution without error correction. The B.D. fingerprint leverages intrinsic device randomness for reliable, high-entropy security codes.

Keywords:
authenticationdielectric breakdownelectrical PUFhardware-security

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Area of Science:

  • Materials Science
  • Electrical Engineering
  • Computer Science

Background:

  • Physically Unclonable Functions (PUFs) are crucial for secure authentication in resource-constrained environments like IoT.
  • Existing PUF solutions often rely on helper data and error-correction systems to ensure stability.
  • Limited intrinsic stability of device fingerprints necessitates complex compensation mechanisms.

Purpose of the Study:

  • To introduce a novel breakdown (B.D.) fingerprint as a robust and lightweight PUF platform.
  • To demonstrate a PUF that operates without helper data or error-correction systems.
  • To leverage intrinsic variations in amorphous HfO2 for reliable security key generation.

Main Methods:

  • Utilized Atomic Layer Deposition (ALD) to grow uniform amorphous HfO2 films.
  • Developed a tailored key-generation scheme to binarize subtle insulation variations via breakdown.
  • Analyzed intra/interdevice Hamming distances (HD) and correlation coefficients for entropy verification.
  • Evaluated electrical retention and thermal stability from +20 to 150 °C.

Main Results:

  • Achieved a perfectly balanced bit uniformity of 0.5 through the breakdown process.
  • Demonstrated convergence of intra/interdevice Hamming distances to 0 and 0.5, respectively.
  • Verified high entropy of the generated security code via correlation-coefficient analysis.
  • Confirmed excellent electrical retention and thermal stability across a wide temperature range.

Conclusions:

  • The proposed B.D. fingerprint offers a robust and lightweight PUF solution.
  • The platform operates reliably without error-correction mechanisms.
  • The B.D. fingerprint provides a broad authentication window with stable performance under various conditions.