Shear-Mode Raman Imaging of Ferroelectric Switching in Multilayer 3R-MoS_{2}

We use shear-mode Raman imaging to track ferroelectric switching in multilayer 3R-MoS_{2}. Within a single flake, mechanically segmented regions respond independently and follow distinct pathways. Partially polarized end states indicate that domain walls can reside between selected layer pairs, producing partial stacking transformations. The dwell time of intermediate states varies widely, indicating that pinning sites strongly influence the dynamics. Second-harmonic generation measurements further reveal three characteristic sample-boundary and domain-wall orientations, including a prevalent chiral direction near the zigzag-armchair bisector. These results provide a direct, noninvasive view of domain-wall-mediated switching in a prototypical sliding ferroelectric and identify pinning and exfoliation-created boundaries as key factors governing its dynamics.