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Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors
Published on: June 23, 2018
Flexible Dual-Modal Sensing Transistor Enabled by Deep Learning Decoupling for Independent Light and Temperature
Shilin Lu1, Ji Hoon Han1, Dong Keun Lee2
1School of Electrical and Electronic Engineering, Yonsei University, Seoul, 03722, Republic of Korea.
None:
Herein, a flexible dual-modal sensing transistor (FDST) is reported, based on zinc oxide nanofibers (ZnO NFs) integrated onto an indium-gallium-zinc-oxide thin-film transistor, and combined with a deep learning-based signal decoupling strategy. Defect-mediated subgap excitation and thermally activated interfacial potential modulation enable high sensitivity dual-modal responses, delivering a broadband photoresponsivity ( ) up to 2.69 A W-1 and a temperature coefficient ( ) of 0.071 °C-1. To enable reliable discrimination and simultaneous reconstruction of light and temperature, a multibias readout physically encodes the coupled stimuli into a high-dimensional current fingerprint, which is decoded by a lightweight multilayer perceptron. This synergistic approach enables accurate and independent reconstruction of light intensity and temperature, achieving coefficients of determination (R2) around 0.99. The FDST exhibits exceptional mechanical robustness under 10,000 bending cycles and severe bending (2 mm radius). Furthermore, a wearable system based on a low-power microcontroller demonstrates real-time monitoring with negligible cross-interference between optical and thermal modalities under uncontrolled outdoor conditions. This work establishes a general strategy for resolving cross-sensitivity, paving the way for robust and intelligent artificial perception systems.
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