Theoretical Study of High-Performance Two-Dimensional WO₂ MOSFETs with Excellent n/p Symmetry

Area of Science:

• Materials Science
• Condensed Matter Physics
• Nanotechnology

Background:

• Scaling down transistors to sub-10 nm necessitates advanced materials to overcome short-channel effects.
• The advancement of two-dimensional (2D) complementary metal-oxide-semiconductor (CMOS) technology is hindered by the lagging development of p-type 2D transistors compared to n-type devices.

Purpose of the Study:

• To systematically investigate the electronic properties of 2D WO2.
• To explore the quantum transport characteristics of dual-gate WO2 metal-oxide-semiconductor field-effect transistors (MOSFETs).

Main Methods:

• Density functional theory (DFT) calculations.
• Non-equilibrium Green's function (NEGF) method for quantum transport analysis.

Main Results:

• At 10 nm channel length, both n-type and p-type WO2 MOSFETs demonstrate high on-state current (Ion) with excellent n/p symmetry, meeting ITRS high-performance requirements.
• A large bandwidth in the isolated valence band was identified as a factor limiting ultrasteep subthreshold swing.
• WO2 MOSFETs exhibit low delay time (τ) and power delay product (PDP).

Conclusions:

• 2D WO2 is a promising material for high-performance sub-10 nm transistors.
• The findings offer a theoretical basis for selecting materials and designing next-generation 2D transistors.
• Addressing the valence band characteristics could further optimize subthreshold swing for improved device performance.