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Nanoscale Research Letters|October 11, 2013
TaOx-based resistive switching memories: prospective and challengesAmit Prakash, Debanjan Jana, Siddheswar Maikap
Nanoscale Research Letters|December 18, 2013
Self-compliance-improved resistive switching using Ir/TaOx/W cross-point memoryAmit Prakash, Debanjan Jana, Subhranu Samanta, et al.
Nanoscale Research Letters|July 2, 2014
Self-compliance RRAM characteristics using a novel W/TaO x /TiN structureSiddheswar Maikap, Debanjan Jana, Mrinmoy Dutta, et al.
Nanoscale Research Letters|September 10, 2013
Impact of electrically formed interfacial layer and improved memory characteristics of IrOx/high-κx/W structures containing AlOx, GdOx, HfOx, and TaOx switching materialsAmit Prakash, Siddheswar Maikap, Writam Banerjee, et al.
Nanoscale Research Letters|August 20, 2014
Copper pillar and memory characteristics using Al2O3 switching material for 3D architectureSiddheswar Maikap, Rajeswar Panja, Debanjan Jana
Nanoscale Research Letters|January 10, 2014
Enhanced resistive switching phenomena using low-positive-voltage format and self-compliance IrOx/GdOx/W cross-point memoriesDebanjan Jana, Siddheswar Maikap, Amit Prakash, et al.
Nanoscale Research Letters|June 20, 2015
Impact of device size and thickness of Al2O 3 film on the Cu pillar and resistive switching characteristics for 3D cross-point memory applicationRajeswar Panja, Sourav Roy, Debanjan Jana, et al.
Nanoscale Research Letters|June 20, 2015
RRAM characteristics using a new Cr/GdOx/TiN structureDebanjan Jana, Mrinmoy Dutta, Subhranu Samanta, et al.
Nanoscale Research Letters|October 9, 2015
Resistive and New Optical Switching Memory Characteristics Using Thermally Grown Ge0.2Se0.8 Film in Cu/GeSex/W StructureDebanjan Jana, Somsubhra Chakrabarti, Sheikh Ziaur Rahaman, et al.
Nano-Micro Letters|November 23, 2018
Observation of Resistive Switching Memory by Reducing Device Size in a New Cr/CrO <sub></sub> /TiO <sub></sub> /TiN StructureDebanjan Jana, Subhranu Samanta, Sourav Roy, et al.
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