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Byung-Gook Park

Showing results (1-10 of 74) with videos related to

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Nanoscale Research Letters|August 13, 2016
Power- and Low-Resistance-State-Dependent, Bipolar Reset-Switching Transitions in SiN-Based Resistive Random-Access MemorySungjun Kim, Byung-Gook Park
Micromachines|April 3, 2021
Retention Enhancement in Low Power NOR Flash Array with High-κ-Based Charge-Trapping Memory by Utilizing High Permittivity and High Bandgap of Aluminum OxideYoung Suh Song, Byung-Gook Park
Nanoscale Research Letters|July 5, 2022
Medium-Temperature-Oxidized GeO<sub>x</sub> Resistive-Switching Random-Access Memory and Its Applicability in Processing-in-Memory ComputingKannan Udaya Mohanan, Seongjae Cho, Byung-Gook Park
Journal of Nanoscience and Nanotechnology|April 28, 2019
Overflow Handling Integrate-and-Fire Silicon-on-Insulator Neuron Circuit Incorporating a Schmitt Trigger Implemented by Back-Gate EffectTaehyung Kim, Young Suh Song, Byung-Gook Park
Nanotechnology|August 19, 2017
Silicon synaptic transistor for hardware-based spiking neural network and neuromorphic systemHyungjin Kim, Sungmin Hwang, Jungjin Park, et al.
Journal of Nanoscience and Nanotechnology|April 22, 2018
An Analysis of Hole Trapping at Grain Boundary or Poly-Si Floating-Body MOSFETTaejin Jang, Myung-Hyun Baek, Hyungjin Kim, et al.
Journal of Nanoscience and Nanotechnology|August 4, 2016
Neuromorphic System Based on CMOS Inverters and Si-Based Synaptic DeviceJungjin Park, Min-Woo Kwon, Hyungjin Kim, et al.
Journal of Nanoscience and Nanotechnology|November 12, 2013
Investigation on the corner effect of L-shaped tunneling field-effect transistors and their fabrication methodSang Wan Kim, Woo Young Choi, Min-Chul Sun, et al.
Journal of Nanoscience and Nanotechnology|April 28, 2019
An Online Learning Method Using Spike-Timing Dependent Plasticity for Neuromorphic SystemsSungmin Hwang, Hyungjin Kim, Min-Woo Kwon, et al.
Journal of Nanoscience and Nanotechnology|November 12, 2013
Suppression of inhibit cell Vth disturbance in three dimensional stack NAND flash memoryByeong-In Choe, Byung-Gook Park, Jung-Kyu Lee, et al.
Pageof 8

Showing results (1-10 of 74) with videos related to

Sort By:
Pageof 8
Nanoscale Research Letters|August 13, 2016
Power- and Low-Resistance-State-Dependent, Bipolar Reset-Switching Transitions in SiN-Based Resistive Random-Access MemorySungjun Kim, Byung-Gook Park
Micromachines|April 3, 2021
Retention Enhancement in Low Power NOR Flash Array with High-κ-Based Charge-Trapping Memory by Utilizing High Permittivity and High Bandgap of Aluminum OxideYoung Suh Song, Byung-Gook Park
Nanoscale Research Letters|July 5, 2022
Medium-Temperature-Oxidized GeO<sub>x</sub> Resistive-Switching Random-Access Memory and Its Applicability in Processing-in-Memory ComputingKannan Udaya Mohanan, Seongjae Cho, Byung-Gook Park
Journal of Nanoscience and Nanotechnology|April 28, 2019
Overflow Handling Integrate-and-Fire Silicon-on-Insulator Neuron Circuit Incorporating a Schmitt Trigger Implemented by Back-Gate EffectTaehyung Kim, Young Suh Song, Byung-Gook Park
Nanotechnology|August 19, 2017
Silicon synaptic transistor for hardware-based spiking neural network and neuromorphic systemHyungjin Kim, Sungmin Hwang, Jungjin Park, et al.
Journal of Nanoscience and Nanotechnology|April 22, 2018
An Analysis of Hole Trapping at Grain Boundary or Poly-Si Floating-Body MOSFETTaejin Jang, Myung-Hyun Baek, Hyungjin Kim, et al.
Journal of Nanoscience and Nanotechnology|August 4, 2016
Neuromorphic System Based on CMOS Inverters and Si-Based Synaptic DeviceJungjin Park, Min-Woo Kwon, Hyungjin Kim, et al.
Journal of Nanoscience and Nanotechnology|November 12, 2013
Investigation on the corner effect of L-shaped tunneling field-effect transistors and their fabrication methodSang Wan Kim, Woo Young Choi, Min-Chul Sun, et al.
Journal of Nanoscience and Nanotechnology|April 28, 2019
An Online Learning Method Using Spike-Timing Dependent Plasticity for Neuromorphic SystemsSungmin Hwang, Hyungjin Kim, Min-Woo Kwon, et al.
Journal of Nanoscience and Nanotechnology|November 12, 2013
Suppression of inhibit cell Vth disturbance in three dimensional stack NAND flash memoryByeong-In Choe, Byung-Gook Park, Jung-Kyu Lee, et al.
Pageof 8