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Nano Letters|May 31, 2008
Exciton and biexciton luminescence from single GaN/AlN quantum dots in nanowiresJulien Renard, Rudeesun Songmuang, Catherine Bougerol, et al.
Nanoscale Research Letters|February 9, 2013
Metal organic vapour-phase epitaxy growth of GaN wires on Si (111) for light-emitting diode applicationsDamien Salomon, Amelie Dussaigne, Matthieu Lafossas, et al.
Inorganic Chemistry|January 14, 2010
Ordering of Pd(2+) and Pd(4+) in the mixed-valent palladate KPd(2)O(3)Rodion V Panin, Nellie R Khasanova, Catherine Bougerol, et al.
Micromachines|October 17, 2019
High Lateral Breakdown Voltage in Thin Channel AlGaN/GaN High Electron Mobility Transistors on AlN/Sapphire TemplatesIdriss Abid, Riad Kabouche, Catherine Bougerol, et al.
Nano Letters|September 1, 2015
Flexible Light-Emitting Diodes Based on Vertical Nitride NanowiresXing Dai, Agnes Messanvi, Hezhi Zhang, et al.
Nano Letters|April 16, 2009
A high-temperature single-photon source from nanowire quantum dotsAdrien Tribu, Gregory Sallen, Thomas Aichele, et al.
ACS Applied Materials & Interfaces|January 15, 2021
Solubility Limit of Ge Dopants in AlGaN: A Chemical and Microstructural Investigation Down to the NanoscaleCatherine Bougerol, Eric Robin, Enrico Di Russo, et al.
ACS Applied Materials & Interfaces|March 27, 2020
Role of Underlayer for Efficient Core-Shell InGaN QWs Grown on <i>m</i>-plane GaN Wire SidewallsAkanksha Kapoor, Sylvain Finot, Vincent Grenier, et al.
Nanotechnology|January 12, 2021
Comprehensive model toward optimization of SAG In-rich InGaN nanorods by hydride vapor phase epitaxyHadi Hijazi, Mohammed Zeghouane, Jihen Jridi, et al.
Nano Letters|January 8, 2014
Ultralong and defect-free GaN nanowires grown by the HVPE processGeoffrey Avit, Kaddour Lekhal, Yamina André, et al.
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