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Changhyun Ko

Showing results (21-30 of 36) with videos related to

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Advanced Materials (Deerfield Beach, Fla.)|November 17, 2015
Site Selective Doping of Ultrathin Metal Dichalcogenides by Laser-Assisted ReactionEunpa Kim, Changhyun Ko, Kyunghoon Kim, et al.
Advanced Materials (Deerfield Beach, Fla.)|February 20, 2016
Ferroelectrically Gated Atomically Thin Transition-Metal Dichalcogenides as Nonvolatile MemoryChanghyun Ko, Yeonbae Lee, Yabin Chen, et al.
Nano Letters|December 10, 2016
Pressurizing Field-Effect Transistors of Few-Layer MoS<sub>2</sub> in a Diamond Anvil CellYabin Chen, Feng Ke, Penghong Ci, et al.
Scientific Reports|September 14, 2013
Defects activated photoluminescence in two-dimensional semiconductors: interplay between bound, charged, and free excitonsSefaattin Tongay, Joonki Suh, Can Ataca, et al.
Materials Horizons|August 26, 2025
High-temperature negative differential resistance in tungsten diselenide multilayers without heterojunctionsHyejin Kim, Taesoo Kim, Yeongseo Han, et al.
Science (New York, N.Y.)|January 28, 2017
Anomalously low electronic thermal conductivity in metallic vanadium dioxideSangwook Lee, Kedar Hippalgaonkar, Fan Yang, et al.
Nano Letters|November 25, 2014
Doping against the native propensity of MoS2: degenerate hole doping by cation substitutionJoonki Suh, Tae-Eon Park, Der-Yuh Lin, et al.
Small (Weinheim an Der Bergstrasse, Germany)|June 24, 2016
Modulating Photoluminescence of Monolayer Molybdenum Disulfide by Metal-Insulator Phase Transition in Active SubstratesJiwei Hou, Xi Wang, Deyi Fu, et al.
Science Advances|October 3, 2020
Electric-field control of spin dynamics during magnetic phase transitionsTianxiang Nan, Yeonbae Lee, Shihao Zhuang, et al.
Small (Weinheim an Der Bergstrasse, Germany)|February 27, 2018
A 0.2 V Micro-Electromechanical Switch Enabled by a Phase TransitionKaichen Dong, Hwan Sung Choe, Xi Wang, et al.
Pageof 4

Showing results (21-30 of 36) with videos related to

Sort By:
Pageof 4
Advanced Materials (Deerfield Beach, Fla.)|November 17, 2015
Site Selective Doping of Ultrathin Metal Dichalcogenides by Laser-Assisted ReactionEunpa Kim, Changhyun Ko, Kyunghoon Kim, et al.
Advanced Materials (Deerfield Beach, Fla.)|February 20, 2016
Ferroelectrically Gated Atomically Thin Transition-Metal Dichalcogenides as Nonvolatile MemoryChanghyun Ko, Yeonbae Lee, Yabin Chen, et al.
Nano Letters|December 10, 2016
Pressurizing Field-Effect Transistors of Few-Layer MoS<sub>2</sub> in a Diamond Anvil CellYabin Chen, Feng Ke, Penghong Ci, et al.
Scientific Reports|September 14, 2013
Defects activated photoluminescence in two-dimensional semiconductors: interplay between bound, charged, and free excitonsSefaattin Tongay, Joonki Suh, Can Ataca, et al.
Materials Horizons|August 26, 2025
High-temperature negative differential resistance in tungsten diselenide multilayers without heterojunctionsHyejin Kim, Taesoo Kim, Yeongseo Han, et al.
Science (New York, N.Y.)|January 28, 2017
Anomalously low electronic thermal conductivity in metallic vanadium dioxideSangwook Lee, Kedar Hippalgaonkar, Fan Yang, et al.
Nano Letters|November 25, 2014
Doping against the native propensity of MoS2: degenerate hole doping by cation substitutionJoonki Suh, Tae-Eon Park, Der-Yuh Lin, et al.
Small (Weinheim an Der Bergstrasse, Germany)|June 24, 2016
Modulating Photoluminescence of Monolayer Molybdenum Disulfide by Metal-Insulator Phase Transition in Active SubstratesJiwei Hou, Xi Wang, Deyi Fu, et al.
Science Advances|October 3, 2020
Electric-field control of spin dynamics during magnetic phase transitionsTianxiang Nan, Yeonbae Lee, Shihao Zhuang, et al.
Small (Weinheim an Der Bergstrasse, Germany)|February 27, 2018
A 0.2 V Micro-Electromechanical Switch Enabled by a Phase TransitionKaichen Dong, Hwan Sung Choe, Xi Wang, et al.
Pageof 4