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Advanced Materials (Deerfield Beach, Fla.)
|
April 19, 2018
Nonvolatile Memory Materials for Neuromorphic Intelligent Machines
Doo Seok Jeong, Cheol Seong Hwang
Nanoscale
|
November 27, 2010
Resistive switching memory: observations with scanning probe microscopy
Min Hwan Lee, Cheol Seong Hwang
Reports on Progress in Physics. Physical Society (Great Britain)
|
October 2, 2019
Fluorite-structure antiferroelectrics
Min Hyuk Park, Cheol Seong Hwang
Nanotechnology
|
December 17, 2011
Electronic bipolar resistance switching in an anti-serially connected Pt/TiO2/Pt structure for improved reliability
Kyung Min Kim, Seungwu Han, Cheol Seong Hwang
Scientific Reports
|
January 20, 2015
Dual conical conducting filament model in resistance switching TiO2 thin films
Kyung Min Kim, Tae Hyung Park, Cheol Seong Hwang
Nanoscale
|
September 25, 2019
Understanding ferroelectric phase formation in doped HfO<sub>2</sub> thin films based on classical nucleation theory
Min Hyuk Park, Young Hwan Lee, Cheol Seong Hwang
Advanced Materials (Deerfield Beach, Fla.)
|
November 17, 2015
Emergence of Negative Capacitance in Multidomain Ferroelectric-Paraelectric Nanocapacitors at Finite Bias
Shusuke Kasamatsu, Satoshi Watanabe, Cheol Seong Hwang, et al.
Nanoscale
|
March 19, 2015
Bipolar resistive switching behavior of an amorphous Ge₂Sb₂Te₅ thin films with a Te layer
Sijung Yoo, Taeyong Eom, Taehong Gwon, et al.
Nanotechnology
|
May 17, 2011
Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook
Kyung Min Kim, Doo Seok Jeong, Cheol Seong Hwang
Advanced Materials (Deerfield Beach, Fla.)
|
June 6, 2019
Modeling of Negative Capacitance in Ferroelectric Thin Films
Hyeon Woo Park, Jangho Roh, Yong Bin Lee, et al.
Page
of 18
Search research articles
Search
Showing results (1-10 of 176) with videos related to
Sort By:
Page
of 18
Advanced Materials (Deerfield Beach, Fla.)
|
April 19, 2018
Nonvolatile Memory Materials for Neuromorphic Intelligent Machines
Doo Seok Jeong, Cheol Seong Hwang
Nanoscale
|
November 27, 2010
Resistive switching memory: observations with scanning probe microscopy
Min Hwan Lee, Cheol Seong Hwang
Reports on Progress in Physics. Physical Society (Great Britain)
|
October 2, 2019
Fluorite-structure antiferroelectrics
Min Hyuk Park, Cheol Seong Hwang
Nanotechnology
|
December 17, 2011
Electronic bipolar resistance switching in an anti-serially connected Pt/TiO2/Pt structure for improved reliability
Kyung Min Kim, Seungwu Han, Cheol Seong Hwang
Scientific Reports
|
January 20, 2015
Dual conical conducting filament model in resistance switching TiO2 thin films
Kyung Min Kim, Tae Hyung Park, Cheol Seong Hwang
Nanoscale
|
September 25, 2019
Understanding ferroelectric phase formation in doped HfO<sub>2</sub> thin films based on classical nucleation theory
Min Hyuk Park, Young Hwan Lee, Cheol Seong Hwang
Advanced Materials (Deerfield Beach, Fla.)
|
November 17, 2015
Emergence of Negative Capacitance in Multidomain Ferroelectric-Paraelectric Nanocapacitors at Finite Bias
Shusuke Kasamatsu, Satoshi Watanabe, Cheol Seong Hwang, et al.
Nanoscale
|
March 19, 2015
Bipolar resistive switching behavior of an amorphous Ge₂Sb₂Te₅ thin films with a Te layer
Sijung Yoo, Taeyong Eom, Taehong Gwon, et al.
Nanotechnology
|
May 17, 2011
Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook
Kyung Min Kim, Doo Seok Jeong, Cheol Seong Hwang
Advanced Materials (Deerfield Beach, Fla.)
|
June 6, 2019
Modeling of Negative Capacitance in Ferroelectric Thin Films
Hyeon Woo Park, Jangho Roh, Yong Bin Lee, et al.
Page
of 18