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Cheol Seong Hwang

Showing results (11-20 of 176) with videos related to

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Nanotechnology|November 8, 2016
A crossbar resistance switching memory readout scheme with sneak current cancellation based on a two-port current-mode sensingWoorham Bae, Kyung Jean Yoon, Cheol Seong Hwang, et al.
Nature Communications|August 28, 2025
Next-generation graph computing with electric current-based and quantum-inspired approachesYoon Ho Jang, Janguk Han, Soo Hyung Lee, et al.
ACS Applied Materials & Interfaces|December 20, 2017
Highly Flexible Resistive Switching Memory Based on the Electronic Switching Mechanism in the Al/TiO<sub>2</sub>/Al/Polyimide StructureJinshi Zhao, Ming Zhang, Shangfei Wan, et al.
Materials Horizons|May 31, 2024
Introduction to memristors and neuromorphic systemsXiaodong Chen, Cheol Seong Hwang, Yoeri van de Burgt, et al.
Nanoscale|July 2, 2020
An ab initio approach on the asymmetric stacking of GaAs 〈111〉 nanowires grown by a vapor-solid methodIn Won Yeu, Gyuseung Han, Cheol Seong Hwang, et al.
ACS Applied Materials & Interfaces|June 29, 2013
Interfacial dead-layer effects in Hf-silicate films with Pt or RuO2 gatesHyo Kyeom Kim, Il-Hyuk Yu, Jae Ho Lee, et al.
Nanoscale|May 13, 2014
Impedance spectroscopic analysis on effects of partial oxidation of TiN bottom electrode and microstructure of amorphous and crystalline HfO2 thin films on their bipolar resistive switchingJi-Wook Yoon, Jung Ho Yoon, Jong-Heun Lee, et al.
Scientific Reports|February 6, 2019
Equilibrium crystal shape of GaAs and InAs considering surface vibration and new (111)B reconstruction: ab-initio thermodynamicsIn Won Yeu, Gyuseung Han, Jaehong Park, et al.
Nanotechnology|September 4, 2013
Short-term memory of TiO2-based electrochemical capacitors: empirical analysis with adoption of a sliding thresholdHyungkwang Lim, Inho Kim, Jin-Sang Kim, et al.
Scientific Reports|September 8, 2017
Surface reconstruction of InAs (001) depending on the pressure and temperature examined by density functional thermodynamicsIn Won Yeu, Jaehong Park, Gyuseung Han, et al.
Pageof 18

Showing results (11-20 of 176) with videos related to

Sort By:
Pageof 18
Nanotechnology|November 8, 2016
A crossbar resistance switching memory readout scheme with sneak current cancellation based on a two-port current-mode sensingWoorham Bae, Kyung Jean Yoon, Cheol Seong Hwang, et al.
Nature Communications|August 28, 2025
Next-generation graph computing with electric current-based and quantum-inspired approachesYoon Ho Jang, Janguk Han, Soo Hyung Lee, et al.
ACS Applied Materials & Interfaces|December 20, 2017
Highly Flexible Resistive Switching Memory Based on the Electronic Switching Mechanism in the Al/TiO<sub>2</sub>/Al/Polyimide StructureJinshi Zhao, Ming Zhang, Shangfei Wan, et al.
Materials Horizons|May 31, 2024
Introduction to memristors and neuromorphic systemsXiaodong Chen, Cheol Seong Hwang, Yoeri van de Burgt, et al.
Nanoscale|July 2, 2020
An ab initio approach on the asymmetric stacking of GaAs 〈111〉 nanowires grown by a vapor-solid methodIn Won Yeu, Gyuseung Han, Cheol Seong Hwang, et al.
ACS Applied Materials & Interfaces|June 29, 2013
Interfacial dead-layer effects in Hf-silicate films with Pt or RuO2 gatesHyo Kyeom Kim, Il-Hyuk Yu, Jae Ho Lee, et al.
Nanoscale|May 13, 2014
Impedance spectroscopic analysis on effects of partial oxidation of TiN bottom electrode and microstructure of amorphous and crystalline HfO2 thin films on their bipolar resistive switchingJi-Wook Yoon, Jung Ho Yoon, Jong-Heun Lee, et al.
Scientific Reports|February 6, 2019
Equilibrium crystal shape of GaAs and InAs considering surface vibration and new (111)B reconstruction: ab-initio thermodynamicsIn Won Yeu, Gyuseung Han, Jaehong Park, et al.
Nanotechnology|September 4, 2013
Short-term memory of TiO2-based electrochemical capacitors: empirical analysis with adoption of a sliding thresholdHyungkwang Lim, Inho Kim, Jin-Sang Kim, et al.
Scientific Reports|September 8, 2017
Surface reconstruction of InAs (001) depending on the pressure and temperature examined by density functional thermodynamicsIn Won Yeu, Jaehong Park, Gyuseung Han, et al.
Pageof 18