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Nanoscale Research Letters
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June 26, 2012
Low-temperature poly-Si nanowire junctionless devices with gate-all-around TiN/Al2O3 stack structure using an implant-free technique
Chun-Jung Su, Tzu-I Tsai, Horng-Chih Lin, et al.
Nanoscale Research Letters
|
March 1, 2012
A junctionless SONOS nonvolatile memory device constructed with in situ-doped polycrystalline silicon nanowires
Chun-Jung Su, Tuan-Kai Su, Tzu-I Tsai, et al.
Nanomaterials (Basel, Switzerland)
|
February 15, 2022
Enhancement of Ferroelectricity in 5 nm Metal-Ferroelectric-Insulator Technologies by Using a Strained TiN Electrode
Cheng-Hung Wu, Kuan-Chi Wang, Yu-Yun Wang, et al.
Nanomaterials (Basel, Switzerland)
|
June 13, 2024
DC-free Method to Evaluate Nanoscale Equivalent Oxide Thickness: Dark-Mode Scanning Capacitance Microscopy
Mao-Nan Chang, Yi-Shan Wu, Chiao-Jung Lin, et al.
Nature Nanotechnology
|
December 20, 2017
Steep-slope hysteresis-free negative capacitance MoS<sub>2</sub> transistors
Mengwei Si, Chun-Jung Su, Chunsheng Jiang, et al.
Biosensors & Bioelectronics
|
September 2, 2008
Novel poly-silicon nanowire field effect transistor for biosensing application
Cheng-Yun Hsiao, Chih-Heng Lin, Cheng-Hsiung Hung, et al.
Chemical Communications (Cambridge, England)
|
November 15, 2008
Ultrasensitive detection of dopamine using a polysilicon nanowire field-effect transistor
Chih-Heng Lin, Cheng-Yun Hsiao, Cheng-Hsiung Hung, et al.
Nanotechnology
|
March 26, 2020
Nonvolatile molecular memory with the multilevel states based on MoS<sub>2</sub> nanochannel field effect transistor through tuning gate voltage to control molecular configurations
Yann-Wen Lan, Chuan-Jie Hong, Po-Chun Chen, et al.
Page
of 1
Search research articles
Search
Showing results (1-10 of 8) with videos related to
Sort By:
Page
of 1
Nanoscale Research Letters
|
June 26, 2012
Low-temperature poly-Si nanowire junctionless devices with gate-all-around TiN/Al2O3 stack structure using an implant-free technique
Chun-Jung Su, Tzu-I Tsai, Horng-Chih Lin, et al.
Nanoscale Research Letters
|
March 1, 2012
A junctionless SONOS nonvolatile memory device constructed with in situ-doped polycrystalline silicon nanowires
Chun-Jung Su, Tuan-Kai Su, Tzu-I Tsai, et al.
Nanomaterials (Basel, Switzerland)
|
February 15, 2022
Enhancement of Ferroelectricity in 5 nm Metal-Ferroelectric-Insulator Technologies by Using a Strained TiN Electrode
Cheng-Hung Wu, Kuan-Chi Wang, Yu-Yun Wang, et al.
Nanomaterials (Basel, Switzerland)
|
June 13, 2024
DC-free Method to Evaluate Nanoscale Equivalent Oxide Thickness: Dark-Mode Scanning Capacitance Microscopy
Mao-Nan Chang, Yi-Shan Wu, Chiao-Jung Lin, et al.
Nature Nanotechnology
|
December 20, 2017
Steep-slope hysteresis-free negative capacitance MoS<sub>2</sub> transistors
Mengwei Si, Chun-Jung Su, Chunsheng Jiang, et al.
Biosensors & Bioelectronics
|
September 2, 2008
Novel poly-silicon nanowire field effect transistor for biosensing application
Cheng-Yun Hsiao, Chih-Heng Lin, Cheng-Hsiung Hung, et al.
Chemical Communications (Cambridge, England)
|
November 15, 2008
Ultrasensitive detection of dopamine using a polysilicon nanowire field-effect transistor
Chih-Heng Lin, Cheng-Yun Hsiao, Cheng-Hsiung Hung, et al.
Nanotechnology
|
March 26, 2020
Nonvolatile molecular memory with the multilevel states based on MoS<sub>2</sub> nanochannel field effect transistor through tuning gate voltage to control molecular configurations
Yann-Wen Lan, Chuan-Jie Hong, Po-Chun Chen, et al.
Page
of 1