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Doohyeok Lim

Showing results (1-10 of 17) with videos related to

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Micromachines|March 28, 2024
Doping-Less Feedback Field-Effect TransistorsHakin Kim, Doohyeok Lim
Nanotechnology|November 8, 2024
Doping- and capacitor-less 1T-DRAM cell using reconfigurable feedback mechanismYuna Suh, Doohyeok Lim
Nanotechnology|March 11, 2025
Logic and static memory functions of an inverter comprising a feedback field effect transistorDaon Kim, Doohyeok Lim
Micromachines|December 23, 2023
Temperature-Dependent Electrical Characteristics of Silicon BiristorEunseong Kim, Doohyeok Lim
Nanomaterials (Basel, Switzerland)|December 22, 2023
Reconfigurable Feedback Field-Effect Transistors with a Single GateYoocheon Lee, Doohyeok Lim
Journal of Nanoscience and Nanotechnology|March 14, 2021
Steep Switching Characteristics of Partially Gated <i>p</i><sup>+</sup>-<i>n</i><sup>+</sup>-<i>i</i>-<i>n</i><sup>+</sup> Silicon-Nanowire TransistorsJaemin Son, Doohyeok Lim, Sangsig Kim
Scientific Reports|October 1, 2017
Memory characteristics of silicon nanowire transistors generated by weak impact ionizationDoohyeok Lim, Minsuk Kim, Yoonjoong Kim, et al.
Optics Express|February 7, 2018
Electrical characteristics of silicon nanowire CMOS inverters under illuminationJeuk Yoo, Yoonjoong Kim, Doohyeok Lim, et al.
Nano Letters|July 29, 2015
Steep Subthreshold Swing n- and p-Channel Operation of Bendable Feedback Field-Effect Transistors with p(+)-i-n(+) Nanowires by Dual-Top-Gate Voltage ModulationYoungin Jeon, Minsuk Kim, Doohyeok Lim, et al.
Nanotechnology|August 14, 2018
Feedback and tunneling operations of a p <sup>+</sup>-i-n <sup>+</sup> silicon nanowire field-effect transistorYoonjoong Kim, Doohyeok Lim, Jinsun Cho, et al.
Pageof 2

Showing results (1-10 of 17) with videos related to

Sort By:
Pageof 2
Micromachines|March 28, 2024
Doping-Less Feedback Field-Effect TransistorsHakin Kim, Doohyeok Lim
Nanotechnology|November 8, 2024
Doping- and capacitor-less 1T-DRAM cell using reconfigurable feedback mechanismYuna Suh, Doohyeok Lim
Nanotechnology|March 11, 2025
Logic and static memory functions of an inverter comprising a feedback field effect transistorDaon Kim, Doohyeok Lim
Micromachines|December 23, 2023
Temperature-Dependent Electrical Characteristics of Silicon BiristorEunseong Kim, Doohyeok Lim
Nanomaterials (Basel, Switzerland)|December 22, 2023
Reconfigurable Feedback Field-Effect Transistors with a Single GateYoocheon Lee, Doohyeok Lim
Journal of Nanoscience and Nanotechnology|March 14, 2021
Steep Switching Characteristics of Partially Gated <i>p</i><sup>+</sup>-<i>n</i><sup>+</sup>-<i>i</i>-<i>n</i><sup>+</sup> Silicon-Nanowire TransistorsJaemin Son, Doohyeok Lim, Sangsig Kim
Scientific Reports|October 1, 2017
Memory characteristics of silicon nanowire transistors generated by weak impact ionizationDoohyeok Lim, Minsuk Kim, Yoonjoong Kim, et al.
Optics Express|February 7, 2018
Electrical characteristics of silicon nanowire CMOS inverters under illuminationJeuk Yoo, Yoonjoong Kim, Doohyeok Lim, et al.
Nano Letters|July 29, 2015
Steep Subthreshold Swing n- and p-Channel Operation of Bendable Feedback Field-Effect Transistors with p(+)-i-n(+) Nanowires by Dual-Top-Gate Voltage ModulationYoungin Jeon, Minsuk Kim, Doohyeok Lim, et al.
Nanotechnology|August 14, 2018
Feedback and tunneling operations of a p <sup>+</sup>-i-n <sup>+</sup> silicon nanowire field-effect transistorYoonjoong Kim, Doohyeok Lim, Jinsun Cho, et al.
Pageof 2