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Related Concept Videos

Field Effect Transistor01:29

Field Effect Transistor

426
Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
426
Biasing of FET01:22

Biasing of FET

284
Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
284
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

339
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
339
MOSFET01:16

MOSFET

477
The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
477
Characteristics of MOSFET01:17

Characteristics of MOSFET

387
Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
387
MOSFET Amplifiers01:17

MOSFET Amplifiers

163
The MOSFET, when operating in its active region, functions as a voltage-controlled current source. In this region, the gate-to-source voltage controls the drain current. This principle underlies the operation of the transconductance MOSFET amplifier. The output current is directed through a load resistor to convert this amplifier into a voltage amplifier. The output voltage is then obtained by subtracting the voltage drop across the load resistance from the supply voltage. This process results...
163

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Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors
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Reconfigurable Feedback Field-Effect Transistors with a Single Gate.

Yoocheon Lee1, Doohyeok Lim1

  • 1School of Electronic Engineering, Kyonggi University, Suwon 16227, Republic of Korea.

Nanomaterials (Basel, Switzerland)
|December 22, 2023
PubMed
Summary
This summary is machine-generated.

We developed a novel reconfigurable field-effect transistor (FET) that switches between p-type and n-type operations. This single-gate device offers steep switching, high on/off ratios, and bistable characteristics for diverse electronic applications.

Keywords:
feedback field-effect transistorpositive feedback mechanismreconfigurable transistor

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Area of Science:

  • Solid State Physics
  • Semiconductor Devices
  • Materials Science

Background:

  • Reconfigurable transistors are crucial for advanced electronic circuits.
  • Existing designs often require complex structures or multiple gates.
  • A need exists for simpler, efficient reconfigurable semiconductor devices.

Purpose of the Study:

  • To introduce a novel reconfigurable feedback field-effect transistor (FET).
  • To demonstrate its operation in both p-type and n-type configurations using a single gate.
  • To analyze its performance characteristics and potential applications.

Main Methods:

  • Fabrication of a feedback field-effect transistor (FET) with a central feedback mechanism.
  • Utilizing a single gate to control the device's operational mode (p-type/n-type).
  • Device characterization through electrical measurements and simulation using a commercial device simulator.

Main Results:

  • The reconfigurable FET demonstrated high symmetry in transfer characteristics.
  • Achieved an exceptional on/off current ratio of approximately 10^10.
  • Exhibited extremely low subthreshold swings and a high on-current (1.5 mA) at low gate voltages.
  • Observed hysteresis and bistable characteristics suitable for memory applications.

Conclusions:

  • The developed feedback FET offers efficient reconfigurability between p-type and n-type operations.
  • Its steep switching, high performance metrics, and bistability make it suitable for advanced electronic devices.
  • This single-gate design presents a promising alternative to existing reconfigurable transistor technologies.