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Nanotechnology|June 6, 2023
Controllable resistive switching behaviors in heteroepitaxial LaNiOYong Zhang, Shunhua Gao, Guiming Cao, et al.ACS Nano|January 5, 2024
The Integration of Two-Dimensional Materials and Ferroelectrics for Device ApplicationsQing Liu, Silin Cui, Renji Bian, et al.National Science Review|May 20, 2022
Recent progress in the synthesis of novel two-dimensional van der Waals materialsRenji Bian, Changcun Li, Qing Liu, et al.Science (New York, N.Y.)|June 6, 2024
Developing fatigue-resistant ferroelectrics using interlayer sliding switchingRenji Bian, Ri He, Er Pan, et al.ACS Applied Materials & Interfaces|March 8, 2019
Photoinduced Hysteresis of Graphene Field-Effect Transistors Due to Hydrogen-Complexed Defects in Silicon DioxideGuiming Cao, Xiaorong Liu, Yantao Zhang, et al.Nano Letters|May 8, 2023
High-Performance Sliding Ferroelectric Transistor Based on Schottky Barrier TuningRenji Bian, Guiming Cao, Er Pan, et al.Nature Communications|May 14, 2025
Configurable kinetics of polarization switching via ion migration in ferroionic CuInP2S6Lei Liang, Er Pan, Guiming Cao, et al.Advanced Materials (Deerfield Beach, Fla.)|October 15, 2021
Mimicking Neuroplasticity via Ion Migration in van der Waals Layered Copper Indium ThiophosphateJiangang Chen, Chao Zhu, Guiming Cao, et al.ACS Nano|January 10, 2022
Solid-Ionic Memory in a van der Waals HeterostructureJieqiong Chen, Rui Guo, Xiaowei Wang, et al.Pageof 1