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Haeju Choi

Showing results (1-10 of 9) with videos related to

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Nanoscale|November 6, 2019
Homogeneous platinum diselenide metal/semiconductor coplanar structure fabricated by selective thickness controlYajie Yang, Sung Kyu Jang, Haeju Choi, et al.
Nano Convergence|March 18, 2023
Anisotropy of impact ionization in WSe<sub>2</sub> field effect transistorsTaeho Kang, Haeju Choi, Jinshu Li, et al.
Nanoscale|October 1, 2024
Carrier type and density dependence of impact ionization characteristics in WSe<sub>2</sub>Haeju Choi, Jinshu Li, Taeho Kang, et al.
Nanoscale|March 1, 2023
A steep-switching impact ionization-based threshold switching field-effect transistorChanwoo Kang, Haeju Choi, Hyeonje Son, et al.
Nature Communications|October 14, 2022
A steep switching WSe<sub>2</sub> impact ionization field-effect transistorHaeju Choi, Jinshu Li, Taeho Kang, et al.
Advanced Materials (Deerfield Beach, Fla.)|August 16, 2025
Steep-Slope CuInP<sub>2</sub>S<sub>6</sub> Ferroionic Threshold Switching Field-Effect Transistor for Implementation of Artificial Spiking NeuronSungpyo Baek, Young Kwon Kim, Sang-Min Lee, et al.
ACS Applied Materials & Interfaces|February 15, 2021
Complementary Driving between 2D Heterostructures and Surface Functionalization for Surpassing Binary Logic DevicesHyeonje Son, Haeju Choi, Jaeho Jeon, et al.
Advanced Materials (Deerfield Beach, Fla.)|September 5, 2024
Spiking Neural Network Integrated with Impact Ionization Field-Effect Transistor Neuron and a Ferroelectric Field-Effect Transistor SynapseHaeju Choi, Sungpyo Baek, Hanggyo Jung, et al.
Advanced Materials (Deerfield Beach, Fla.)|March 26, 2024
High-κ Dielectric (HfO<sub>2</sub>)/2D Semiconductor (HfSe<sub>2</sub>) Gate Stack for Low-Power Steep-Switching Computing DevicesTaeho Kang, Joonho Park, Hanggyo Jung, et al.
Pageof 1

Showing results (1-10 of 9) with videos related to

Sort By:
Pageof 1
Nanoscale|November 6, 2019
Homogeneous platinum diselenide metal/semiconductor coplanar structure fabricated by selective thickness controlYajie Yang, Sung Kyu Jang, Haeju Choi, et al.
Nano Convergence|March 18, 2023
Anisotropy of impact ionization in WSe<sub>2</sub> field effect transistorsTaeho Kang, Haeju Choi, Jinshu Li, et al.
Nanoscale|October 1, 2024
Carrier type and density dependence of impact ionization characteristics in WSe<sub>2</sub>Haeju Choi, Jinshu Li, Taeho Kang, et al.
Nanoscale|March 1, 2023
A steep-switching impact ionization-based threshold switching field-effect transistorChanwoo Kang, Haeju Choi, Hyeonje Son, et al.
Nature Communications|October 14, 2022
A steep switching WSe<sub>2</sub> impact ionization field-effect transistorHaeju Choi, Jinshu Li, Taeho Kang, et al.
Advanced Materials (Deerfield Beach, Fla.)|August 16, 2025
Steep-Slope CuInP<sub>2</sub>S<sub>6</sub> Ferroionic Threshold Switching Field-Effect Transistor for Implementation of Artificial Spiking NeuronSungpyo Baek, Young Kwon Kim, Sang-Min Lee, et al.
ACS Applied Materials & Interfaces|February 15, 2021
Complementary Driving between 2D Heterostructures and Surface Functionalization for Surpassing Binary Logic DevicesHyeonje Son, Haeju Choi, Jaeho Jeon, et al.
Advanced Materials (Deerfield Beach, Fla.)|September 5, 2024
Spiking Neural Network Integrated with Impact Ionization Field-Effect Transistor Neuron and a Ferroelectric Field-Effect Transistor SynapseHaeju Choi, Sungpyo Baek, Hanggyo Jung, et al.
Advanced Materials (Deerfield Beach, Fla.)|March 26, 2024
High-κ Dielectric (HfO<sub>2</sub>)/2D Semiconductor (HfSe<sub>2</sub>) Gate Stack for Low-Power Steep-Switching Computing DevicesTaeho Kang, Joonho Park, Hanggyo Jung, et al.
Pageof 1