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Haksoon Jung

Showing results (1-10 of 7) with videos related to

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ACS Applied Materials & Interfaces|January 2, 2023
Large Transconductance of Electrochemical Transistors Based on Fluorinated Donor-Acceptor Conjugated PolymersSeongmin Heo, Jimin Kwon, Mingi Sung, et al.
Advanced Materials (Deerfield Beach, Fla.)|June 30, 2026
Monolithic 3D-Integrated All-Solid Ion-Gated Carbon Nanotube Transistors With Tunable Ionic Conductance for Multi-Timescale Reservoir ComputingHaksoon Jung, Hanbin Cho, Yongwoo Lee, et al.
ACS Nano|February 3, 2025
Back-End-of-Line-Compatible Passivation of Sulfur Vacancies in MoS<sub>2</sub> Transistors Using Electron-Withdrawing BenzenethiolHaksoon Jung, Mingyu Kim, Yongwoo Lee, et al.
Nature Communications|April 30, 2026
Wafer-scale uniform non-ferroelectric κ-phase In<sub>2</sub>Se<sub>3</sub> transistorsJaeyun Lee, Yongwoo Lee, Haksoon Jung, et al.
Advanced Materials (Deerfield Beach, Fla.)|November 23, 2022
High-Performance Solution-Processed 2D P-Type WSe<sub>2</sub> Transistors and Circuits through Molecular DopingTaoyu Zou, Hyun-Jun Kim, Soonhyo Kim, et al.
Nature Communications|April 2, 2022
High-performance hysteresis-free perovskite transistors through anion engineeringHuihui Zhu, Ao Liu, Kyu In Shim, et al.
ACS Nano|February 18, 2026
Advances and Future Challenges in Monolithic 3D Integrated Logic, Power, and Optoelectronics Technologies for Tightly Interconnected Intelligent SystemsHaksoon Jung, Joonghoon Choi, Seunghun Baek, et al.
Pageof 1

Showing results (1-10 of 7) with videos related to

Sort By:
Pageof 1
ACS Applied Materials & Interfaces|January 2, 2023
Large Transconductance of Electrochemical Transistors Based on Fluorinated Donor-Acceptor Conjugated PolymersSeongmin Heo, Jimin Kwon, Mingi Sung, et al.
Advanced Materials (Deerfield Beach, Fla.)|June 30, 2026
Monolithic 3D-Integrated All-Solid Ion-Gated Carbon Nanotube Transistors With Tunable Ionic Conductance for Multi-Timescale Reservoir ComputingHaksoon Jung, Hanbin Cho, Yongwoo Lee, et al.
ACS Nano|February 3, 2025
Back-End-of-Line-Compatible Passivation of Sulfur Vacancies in MoS<sub>2</sub> Transistors Using Electron-Withdrawing BenzenethiolHaksoon Jung, Mingyu Kim, Yongwoo Lee, et al.
Nature Communications|April 30, 2026
Wafer-scale uniform non-ferroelectric κ-phase In<sub>2</sub>Se<sub>3</sub> transistorsJaeyun Lee, Yongwoo Lee, Haksoon Jung, et al.
Advanced Materials (Deerfield Beach, Fla.)|November 23, 2022
High-Performance Solution-Processed 2D P-Type WSe<sub>2</sub> Transistors and Circuits through Molecular DopingTaoyu Zou, Hyun-Jun Kim, Soonhyo Kim, et al.
Nature Communications|April 2, 2022
High-performance hysteresis-free perovskite transistors through anion engineeringHuihui Zhu, Ao Liu, Kyu In Shim, et al.
ACS Nano|February 18, 2026
Advances and Future Challenges in Monolithic 3D Integrated Logic, Power, and Optoelectronics Technologies for Tightly Interconnected Intelligent SystemsHaksoon Jung, Joonghoon Choi, Seunghun Baek, et al.
Pageof 1