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Hangbing Lv

Showing results (21-30 of 36) with videos related to

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Advanced Materials (Deerfield Beach, Fla.)|October 20, 2020
Oxide-Based Electrolyte-Gated Transistors for Spatiotemporal Information ProcessingYue Li, Jikai Lu, Dashan Shang, et al.
Nanoscale Research Letters|March 25, 2017
Anisotropic Magnetoresistance of Nano-conductive Filament in Co/HfO<sub>2</sub>/Pt Resistive Switching MemoryLeilei Li, Yang Liu, Jiao Teng, et al.
Nanoscale Research Letters|April 9, 2015
Investigation of LRS dependence on the retention of HRS in CBRAMXiaoxin Xu, Hangbing Lv, Hongtao Liu, et al.
Small (Weinheim an Der Bergstrasse, Germany)|February 25, 2017
Confining Cation Injection to Enhance CBRAM Performance by Nanopore Graphene LayerXiaolong Zhao, Sen Liu, Jiebin Niu, et al.
Nanoscale Research Letters|June 20, 2015
Statistical characteristics of reset switching in Cu/HfO2/Pt resistive switching memoryMeiyun Zhang, Shibing Long, Guoming Wang, et al.
Nanoscale Research Letters|March 30, 2019
Suppression of Filament Overgrowth in Conductive Bridge Random Access Memory by Ta<sub>2</sub>O<sub>5</sub>/TaO<sub>x</sub> Bi-Layer StructureJie Yu, Xiaoxin Xu, Tiancheng Gong, et al.
Nanotechnology|May 17, 2011
Improvement of resistive switching characteristics in ZrO2 film by embedding a thin TiOx layerYingtao Li, Shibing Long, Hangbing Lv, et al.
Nanotechnology|December 21, 2019
Modulating the filament rupture degree of threshold switching device for self-selective and low-current nonvolatile memory applicationXiaolong Zhao, Jiebin Niu, Yang Yang, et al.
ACS Applied Materials & Interfaces|April 29, 2020
Microscopic Mechanism of Carbon-Dopant Manipulating Device Performance in CGeSbTe-Based Phase Change Random Access MemoryYan Cheng, Daolin Cai, Yonghui Zheng, et al.
Nanoscale|August 12, 2016
Super non-linear RRAM with ultra-low power for 3D vertical nano-crossbar arraysQing Luo, Xiaoxin Xu, Hongtao Liu, et al.
Pageof 4

Showing results (21-30 of 36) with videos related to

Sort By:
Pageof 4
Advanced Materials (Deerfield Beach, Fla.)|October 20, 2020
Oxide-Based Electrolyte-Gated Transistors for Spatiotemporal Information ProcessingYue Li, Jikai Lu, Dashan Shang, et al.
Nanoscale Research Letters|March 25, 2017
Anisotropic Magnetoresistance of Nano-conductive Filament in Co/HfO<sub>2</sub>/Pt Resistive Switching MemoryLeilei Li, Yang Liu, Jiao Teng, et al.
Nanoscale Research Letters|April 9, 2015
Investigation of LRS dependence on the retention of HRS in CBRAMXiaoxin Xu, Hangbing Lv, Hongtao Liu, et al.
Small (Weinheim an Der Bergstrasse, Germany)|February 25, 2017
Confining Cation Injection to Enhance CBRAM Performance by Nanopore Graphene LayerXiaolong Zhao, Sen Liu, Jiebin Niu, et al.
Nanoscale Research Letters|June 20, 2015
Statistical characteristics of reset switching in Cu/HfO2/Pt resistive switching memoryMeiyun Zhang, Shibing Long, Guoming Wang, et al.
Nanoscale Research Letters|March 30, 2019
Suppression of Filament Overgrowth in Conductive Bridge Random Access Memory by Ta<sub>2</sub>O<sub>5</sub>/TaO<sub>x</sub> Bi-Layer StructureJie Yu, Xiaoxin Xu, Tiancheng Gong, et al.
Nanotechnology|May 17, 2011
Improvement of resistive switching characteristics in ZrO2 film by embedding a thin TiOx layerYingtao Li, Shibing Long, Hangbing Lv, et al.
Nanotechnology|December 21, 2019
Modulating the filament rupture degree of threshold switching device for self-selective and low-current nonvolatile memory applicationXiaolong Zhao, Jiebin Niu, Yang Yang, et al.
ACS Applied Materials & Interfaces|April 29, 2020
Microscopic Mechanism of Carbon-Dopant Manipulating Device Performance in CGeSbTe-Based Phase Change Random Access MemoryYan Cheng, Daolin Cai, Yonghui Zheng, et al.
Nanoscale|August 12, 2016
Super non-linear RRAM with ultra-low power for 3D vertical nano-crossbar arraysQing Luo, Xiaoxin Xu, Hongtao Liu, et al.
Pageof 4