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Journal of Nanoscience and Nanotechnology|April 28, 2019
Design Optimization of InGaAs/GaAsSb-Based <i>P</i>-Type Gate-All-Around Arch-Shaped Tunneling Field-Effect TransistorBo Gyeong Kim, Jae Hwa Seo, Young Jun Yoon, et al.Micromachines|December 16, 2020
Design and Analysis of Gallium Nitride-Based p-i-n Diode Structure for Betavoltaic Cell with Enhanced Output Power DensityYoung Jun Yoon, Jae Sang Lee, In Man Kang, et al.Journal of Nanoscience and Nanotechnology|April 28, 2019
Capacitorless One-Transistor Dynamic Random-Access Memory Based on Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor with Si/SiGe Heterojunction and Underlap Structure for Improvement of Sensing Margin and Retention TimeYoung Jun Yoon, Min Su Cho, Bo Gyeong Kim, et al.Advanced Science (Weinheim, Baden-Wurttemberg, Germany)|December 13, 2023
Formation of Cluster-Structured Metallic Filaments in Organic Memristors for Wearable Neuromorphic Systems with Bio-Mimetic Synaptic Weight DistributionsUihoon Jung, Miseong Kim, Jaewon Jang, et al.Journal of Nanoscience and Nanotechnology|April 28, 2019
Effect of Interface Traps on the Device Performance of InGaAs-Based Gate-All-Around Tunneling Field-Effect TransistorsWon Douk Jang, Young Jun Yoon, Min Su Cho, et al.Journal of Nanoscience and Nanotechnology|January 5, 2016
Analyses on RF Performances of Silicon-Compatible InGaAs-Based Planar-Type and Fin-Type Junctionless Field-Effect TransistorsJae Hwa Seo, Young Jun Yoon, Seongjae Cho, et al.Journal of Nanoscience and Nanotechnology|April 28, 2019
Analysis of Electrical Characteristics of InAlGaN/GaN-Based High Electron Mobility Transistors with AlGaN Back BarriersJun Hyeok Jung, Young Jun Yoon, Min Su Cho, et al.ACS Applied Materials & Interfaces|October 4, 2022
Organizing Reliable Polymer Electrode Lines in Flexible Neural Networks via Coffee Ring-Free Micromolding in CapillariesMin Woo Park, Do-Yun Kim, Ukju An, et al.Nanomaterials (Basel, Switzerland)|March 27, 2024
Effect of Electrochemically Active Top Electrode Materials on Nanoionic Conductive Bridge Y<sub>2</sub>O<sub>3</sub> Random-Access MemoryYoonjin Cho, Sangwoo Lee, Seongwon Heo, et al.Nanomaterials (Basel, Switzerland)|May 10, 2024
UV/Ozone-Treated and Sol-Gel-Processed Y<sub>2</sub>O<sub>3</sub> Insulators Prepared Using Gelation-Delaying PrecursorsSangwoo Lee, Yoonjin Cho, Seongwon Heo, et al.Pageof 6