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Journal of Nanoscience and Nanotechnology|December 7, 2010
Charge storage behaviors of Ge nanocrystals embedded in SiO2 for the application in non-volatile memory devicesM Yang, T P Chen, J I Wong, et al.ACS Applied Materials & Interfaces|April 13, 2011
Ultraviolet random lasing action from highly disordered n-AlN/p-GaN heterojunctionH Y Yang, S F Yu, J I Wong, et al.Physical Review Letters|January 15, 2011
Tunneling spin injection into single layer grapheneWei Han, K Pi, K M McCreary, et al.Journal of Nanoscience and Nanotechnology|April 1, 2010
Charging effect of aluminum nitride thin films containing Al nanocrystalsY Liu, T P Chen, L Ding, et al.Physical Review Letters|January 15, 2011
Oscillatory spin polarization and magneto-optical Kerr effect in Fe₃O₄ thin films on GaAs(001)Yan Li, Wei Han, A G Swartz, et al.Optics Express|October 14, 2010
Electrically tunable white-color electroluminescence from Si-implanted silicon nitride thin filmZ H Cen, T P Chen, Z Liu, et al.Journal of Nanoscience and Nanotechnology|April 1, 2010
Si-based light-emitting structure synthesized with low-energy ion implantation at a low dosageY Liu, T P Chen, S F Yu, et al.Journal of Nanoscience and Nanotechnology|April 26, 2007
Performance of silicon nanocrystal non-volatile memory devices under various programming mechanismsC Y Ng, T P Chenl, J I Wong, et al.Journal of Nanoscience and Nanotechnology|December 5, 2008
Evolution of photoluminescence mechanisms of Si(+)-implanted SiO2 films with thermal annealingL Ding, T P Chen, Y Liu, et al.Pageof 1