Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Filters

Jaeho Jeon

Showing results (21-30 of 26) with videos related to

Pageof 3
Sort By:
You have reached the last page of results.This site can display upto 26 results.
Nature Communications|November 8, 2016
Phosphorene/rhenium disulfide heterojunction-based negative differential resistance device for multi-valued logicJaewoo Shim, Seyong Oh, Dong-Ho Kang, et al.
Advanced Materials (Deerfield Beach, Fla.)|April 24, 2016
A High-Performance WSe2 /h-BN Photodetector using a Triphenylphosphine (PPh3 )-Based n-Doping TechniqueSeo-Hyeon Jo, Dong-Ho Kang, Jaewoo Shim, et al.
Advanced Materials (Deerfield Beach, Fla.)|December 1, 2015
Extremely Low Contact Resistance on Graphene through n-Type Doping and Edge Contact DesignHyung-Youl Park, Woo-Shik Jung, Dong-Ho Kang, et al.
Advanced Materials (Deerfield Beach, Fla.)|May 21, 2016
High-Performance 2D Rhenium Disulfide (ReS2 ) Transistors and Photodetectors by Oxygen Plasma TreatmentJaewoo Shim, Aely Oh, Dong-Ho Kang, et al.
Scientific Reports|October 25, 2016
M-DNA/Transition Metal Dichalcogenide Hybrid Structure-based Bio-FET sensor with Ultra-high SensitivityHyung-Youl Park, Sreekantha Reddy Dugasani, Dong-Ho Kang, et al.
Advanced Materials (Deerfield Beach, Fla.)|May 10, 2016
Extremely Large Gate Modulation in Vertical Graphene/WSe2 Heterojunction Barristor Based on a Novel Transport MechanismJaewoo Shim, Hyo Seok Kim, Yoon Su Shim, et al.
Pageof 3

Showing results (21-30 of 26) with videos related to

Sort By:
Pageof 3
You have reached the last page of results.This site can display upto 26 results.
Nature Communications|November 8, 2016
Phosphorene/rhenium disulfide heterojunction-based negative differential resistance device for multi-valued logicJaewoo Shim, Seyong Oh, Dong-Ho Kang, et al.
Advanced Materials (Deerfield Beach, Fla.)|April 24, 2016
A High-Performance WSe2 /h-BN Photodetector using a Triphenylphosphine (PPh3 )-Based n-Doping TechniqueSeo-Hyeon Jo, Dong-Ho Kang, Jaewoo Shim, et al.
Advanced Materials (Deerfield Beach, Fla.)|December 1, 2015
Extremely Low Contact Resistance on Graphene through n-Type Doping and Edge Contact DesignHyung-Youl Park, Woo-Shik Jung, Dong-Ho Kang, et al.
Advanced Materials (Deerfield Beach, Fla.)|May 21, 2016
High-Performance 2D Rhenium Disulfide (ReS2 ) Transistors and Photodetectors by Oxygen Plasma TreatmentJaewoo Shim, Aely Oh, Dong-Ho Kang, et al.
Scientific Reports|October 25, 2016
M-DNA/Transition Metal Dichalcogenide Hybrid Structure-based Bio-FET sensor with Ultra-high SensitivityHyung-Youl Park, Sreekantha Reddy Dugasani, Dong-Ho Kang, et al.
Advanced Materials (Deerfield Beach, Fla.)|May 10, 2016
Extremely Large Gate Modulation in Vertical Graphene/WSe2 Heterojunction Barristor Based on a Novel Transport MechanismJaewoo Shim, Hyo Seok Kim, Yoon Su Shim, et al.
Pageof 3