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Nature Communications|September 3, 2016
Two-terminal floating-gate memory with van der Waals heterostructures for ultrahigh on/off ratioQuoc An Vu, Yong Seon Shin, Young Rae Kim, et al.ACS Applied Materials & Interfaces|July 26, 2021
Unveiling the Origin of Robust Ferroelectricity in Sub-2 nm Hafnium Zirconium Oxide FilmsHyangsook Lee, Duk-Hyun Choe, Sanghyun Jo, et al.Nanotechnology|June 16, 2011
Characteristics of CVD graphene nanoribbon formed by a ZnO nanowire hardmaskChang Goo Kang, Jang Won Kang, Sang Kyung Lee, et al.Advanced Materials (Deerfield Beach, Fla.)|August 11, 2022
Revival of Ferroelectric Memories Based on Emerging Fluorite-Structured FerroelectricsJu Yong Park, Duk-Hyun Choe, Dong Hyun Lee, et al.Advanced Materials (Deerfield Beach, Fla.)|September 25, 2025
Field-Induced Structural Dynamics of Polarization Switching in HfxZr1-xO2 Thin FilmsSangjun Lee, Sunghyun Kim, Seong Yong Park, et al.Science (New York, N.Y.)|May 13, 2022
Highly enhanced ferroelectricity in HfO2-based ferroelectric thin film by light ion bombardmentSeunghun Kang, Woo-Sung Jang, Anna N Morozovska, et al.Nature|November 26, 2025
Ferroelectric transistors for low-power NAND flash memorySijung Yoo, Taek Jung Kim, Seung-Geol Nam, et al.Nature|April 7, 2022
Ultrathin ferroic HfO2-ZrO2 superlattice gate stack for advanced transistorsSuraj S Cheema, Nirmaan Shanker, Li-Chen Wang, et al.Pageof 3