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Jong-Ho Bae

Showing results (1-10 of 32) with videos related to

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Journal of Nanoscience and Nanotechnology|August 4, 2016
Dual-Gate p-GaN Gate High Electron Mobility Transistors for Steep Subthreshold SlopeJong-Ho Bae, Jong-Ho Lee
Micromachines|November 11, 2022
Investigation of Deep Spiking Neural Networks Utilizing Gated Schottky Diode as Synaptic DevicesSung-Tae Lee, Jong-Ho Bae
Materials (Basel, Switzerland)|February 11, 2023
Short-Term Memory Characteristics of IGZO-Based Three-Terminal DevicesJuyeong Pyo, Jong-Ho Bae, Sungjun Kim, et al.
Nano Convergence|January 28, 2026
Gate insulator stack engineering for fully CMOS-compatible reservoir computingJoon Hwang, Min-Kyu Park, Jeonghyun Kim, et al.
Journal of Nanoscience and Nanotechnology|April 28, 2019
Gated Schottky Diode-Type Synaptic Device with a Field-Plate Structure to Reduce the Forward CurrentJong-Ho Bae, Suhwan Lim, Dongseok Kwon, et al.
Physical Review Letters|October 25, 2025
Nearly Temperature-Independent Gate-Electric-Field-Driven Lateral Migration of Electrons in Si_{3}N_{4} Charge Trap Layer of Flash Memory DevicesJoon Hwang, Min-Kyu Park, Joonhyung Cho, et al.
Journal of Nanoscience and Nanotechnology|January 24, 2020
Implementation of Synaptic Device Using Various High-<i>k</i> Gate Dielectric StacksYoung-Tak Seo, Min-Kyu Park, Jong-Ho Bae, et al.
Journal of Nanoscience and Nanotechnology|July 2, 2020
Pruning for Hardware-Based Deep Spiking Neural Networks Using Gated Schottky Diode as Synaptic DevicesSung-Tae Lee, Suhwan Lim, Jong-Ho Bae, et al.
Nanotechnology|July 3, 2023
Wafer-scale striped network transistors based on purified semiconducting carbon nanotubes for commercializationYulim An, Yongwoo Lee, Dong-Myong Kim, et al.
Scientific Reports|November 23, 2024
Charge-trap synaptic device with polycrystalline silicon channel for low power in-memory computingMin-Kyu Park, Joon Hwang, Soomin Kim, et al.
Pageof 4

Showing results (1-10 of 32) with videos related to

Sort By:
Pageof 4
Journal of Nanoscience and Nanotechnology|August 4, 2016
Dual-Gate p-GaN Gate High Electron Mobility Transistors for Steep Subthreshold SlopeJong-Ho Bae, Jong-Ho Lee
Micromachines|November 11, 2022
Investigation of Deep Spiking Neural Networks Utilizing Gated Schottky Diode as Synaptic DevicesSung-Tae Lee, Jong-Ho Bae
Materials (Basel, Switzerland)|February 11, 2023
Short-Term Memory Characteristics of IGZO-Based Three-Terminal DevicesJuyeong Pyo, Jong-Ho Bae, Sungjun Kim, et al.
Nano Convergence|January 28, 2026
Gate insulator stack engineering for fully CMOS-compatible reservoir computingJoon Hwang, Min-Kyu Park, Jeonghyun Kim, et al.
Journal of Nanoscience and Nanotechnology|April 28, 2019
Gated Schottky Diode-Type Synaptic Device with a Field-Plate Structure to Reduce the Forward CurrentJong-Ho Bae, Suhwan Lim, Dongseok Kwon, et al.
Physical Review Letters|October 25, 2025
Nearly Temperature-Independent Gate-Electric-Field-Driven Lateral Migration of Electrons in Si_{3}N_{4} Charge Trap Layer of Flash Memory DevicesJoon Hwang, Min-Kyu Park, Joonhyung Cho, et al.
Journal of Nanoscience and Nanotechnology|January 24, 2020
Implementation of Synaptic Device Using Various High-<i>k</i> Gate Dielectric StacksYoung-Tak Seo, Min-Kyu Park, Jong-Ho Bae, et al.
Journal of Nanoscience and Nanotechnology|July 2, 2020
Pruning for Hardware-Based Deep Spiking Neural Networks Using Gated Schottky Diode as Synaptic DevicesSung-Tae Lee, Suhwan Lim, Jong-Ho Bae, et al.
Nanotechnology|July 3, 2023
Wafer-scale striped network transistors based on purified semiconducting carbon nanotubes for commercializationYulim An, Yongwoo Lee, Dong-Myong Kim, et al.
Scientific Reports|November 23, 2024
Charge-trap synaptic device with polycrystalline silicon channel for low power in-memory computingMin-Kyu Park, Joon Hwang, Soomin Kim, et al.
Pageof 4