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Journal of Nanoscience and Nanotechnology
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August 4, 2016
Dual-Gate p-GaN Gate High Electron Mobility Transistors for Steep Subthreshold Slope
Jong-Ho Bae, Jong-Ho Lee
Micromachines
|
November 11, 2022
Investigation of Deep Spiking Neural Networks Utilizing Gated Schottky Diode as Synaptic Devices
Sung-Tae Lee, Jong-Ho Bae
Materials (Basel, Switzerland)
|
February 11, 2023
Short-Term Memory Characteristics of IGZO-Based Three-Terminal Devices
Juyeong Pyo, Jong-Ho Bae, Sungjun Kim, et al.
Nano Convergence
|
January 28, 2026
Gate insulator stack engineering for fully CMOS-compatible reservoir computing
Joon Hwang, Min-Kyu Park, Jeonghyun Kim, et al.
Journal of Nanoscience and Nanotechnology
|
April 28, 2019
Gated Schottky Diode-Type Synaptic Device with a Field-Plate Structure to Reduce the Forward Current
Jong-Ho Bae, Suhwan Lim, Dongseok Kwon, et al.
Physical Review Letters
|
October 25, 2025
Nearly Temperature-Independent Gate-Electric-Field-Driven Lateral Migration of Electrons in Si_{3}N_{4} Charge Trap Layer of Flash Memory Devices
Joon Hwang, Min-Kyu Park, Joonhyung Cho, et al.
Journal of Nanoscience and Nanotechnology
|
January 24, 2020
Implementation of Synaptic Device Using Various High-<i>k</i> Gate Dielectric Stacks
Young-Tak Seo, Min-Kyu Park, Jong-Ho Bae, et al.
Journal of Nanoscience and Nanotechnology
|
July 2, 2020
Pruning for Hardware-Based Deep Spiking Neural Networks Using Gated Schottky Diode as Synaptic Devices
Sung-Tae Lee, Suhwan Lim, Jong-Ho Bae, et al.
Nanotechnology
|
July 3, 2023
Wafer-scale striped network transistors based on purified semiconducting carbon nanotubes for commercialization
Yulim An, Yongwoo Lee, Dong-Myong Kim, et al.
Scientific Reports
|
November 23, 2024
Charge-trap synaptic device with polycrystalline silicon channel for low power in-memory computing
Min-Kyu Park, Joon Hwang, Soomin Kim, et al.
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of 4
Search research articles
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Showing results (1-10 of 32) with videos related to
Sort By:
Page
of 4
Journal of Nanoscience and Nanotechnology
|
August 4, 2016
Dual-Gate p-GaN Gate High Electron Mobility Transistors for Steep Subthreshold Slope
Jong-Ho Bae, Jong-Ho Lee
Micromachines
|
November 11, 2022
Investigation of Deep Spiking Neural Networks Utilizing Gated Schottky Diode as Synaptic Devices
Sung-Tae Lee, Jong-Ho Bae
Materials (Basel, Switzerland)
|
February 11, 2023
Short-Term Memory Characteristics of IGZO-Based Three-Terminal Devices
Juyeong Pyo, Jong-Ho Bae, Sungjun Kim, et al.
Nano Convergence
|
January 28, 2026
Gate insulator stack engineering for fully CMOS-compatible reservoir computing
Joon Hwang, Min-Kyu Park, Jeonghyun Kim, et al.
Journal of Nanoscience and Nanotechnology
|
April 28, 2019
Gated Schottky Diode-Type Synaptic Device with a Field-Plate Structure to Reduce the Forward Current
Jong-Ho Bae, Suhwan Lim, Dongseok Kwon, et al.
Physical Review Letters
|
October 25, 2025
Nearly Temperature-Independent Gate-Electric-Field-Driven Lateral Migration of Electrons in Si_{3}N_{4} Charge Trap Layer of Flash Memory Devices
Joon Hwang, Min-Kyu Park, Joonhyung Cho, et al.
Journal of Nanoscience and Nanotechnology
|
January 24, 2020
Implementation of Synaptic Device Using Various High-<i>k</i> Gate Dielectric Stacks
Young-Tak Seo, Min-Kyu Park, Jong-Ho Bae, et al.
Journal of Nanoscience and Nanotechnology
|
July 2, 2020
Pruning for Hardware-Based Deep Spiking Neural Networks Using Gated Schottky Diode as Synaptic Devices
Sung-Tae Lee, Suhwan Lim, Jong-Ho Bae, et al.
Nanotechnology
|
July 3, 2023
Wafer-scale striped network transistors based on purified semiconducting carbon nanotubes for commercialization
Yulim An, Yongwoo Lee, Dong-Myong Kim, et al.
Scientific Reports
|
November 23, 2024
Charge-trap synaptic device with polycrystalline silicon channel for low power in-memory computing
Min-Kyu Park, Joon Hwang, Soomin Kim, et al.
Page
of 4