Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Filters

Jongseon Seo

Showing results (1-10 of 8) with videos related to

Pageof 1
Sort By:
Nanotechnology|May 17, 2022
Novel training method for metal-oxide memristive synapse device to overcome trade-off between linearity and dynamic rangeJongseon Seo, Geonhui Han, Daeseok Lee
Micromachines|November 11, 2022
Ag-Ion-Based Transparent Threshold Switching Selector with Filament-Size-Dependent Rectifying BehaviorJongseon Seo, Geonhui Han, Hyejin Kim, et al.
Small (Weinheim an Der Bergstrasse, Germany)|May 10, 2026
Sub-Nanometer Ferroelectric Tunnel Junctions With Record-High on-Current Density Through Synergistic Microwave Annealing and High-Field ActivationLaeyong Jung, Hojung Jang, Jongseon Seo, et al.
Scientific Reports|September 23, 2022
Solid state thin electrolyte to overcome transparency-capacity dilemma of transparent supercapacitorJongseon Seo, Geonhui Han, Hyejin Kim, et al.
Scientific Reports|August 31, 2023
Three-dimensional vertical structural electrochemical random access memory for high-density integrated synapse deviceHyejin Kim, Jongseon Seo, Seojin Cho, et al.
ACS Applied Materials & Interfaces|March 24, 2025
Strategic Material Design for Highly Reliable QLC 3D V-NAND Using Bypass Resistive Random Access MemoryGeonhui Han, Jongseon Seo, Junghoon Park, et al.
Scientific Reports|December 2, 2021
Alternative negative weight for simpler hardware implementation of synapse device based neuromorphic systemGeonhui Han, Chuljun Lee, Jae-Eun Lee, et al.
Micromachines|March 26, 2022
Ion-Driven Electrochemical Random-Access Memory-Based Synaptic Devices for Neuromorphic Computing Systems: A Mini-ReviewHeebum Kang, Jongseon Seo, Hyejin Kim, et al.
Pageof 1

Showing results (1-10 of 8) with videos related to

Sort By:
Pageof 1
Nanotechnology|May 17, 2022
Novel training method for metal-oxide memristive synapse device to overcome trade-off between linearity and dynamic rangeJongseon Seo, Geonhui Han, Daeseok Lee
Micromachines|November 11, 2022
Ag-Ion-Based Transparent Threshold Switching Selector with Filament-Size-Dependent Rectifying BehaviorJongseon Seo, Geonhui Han, Hyejin Kim, et al.
Small (Weinheim an Der Bergstrasse, Germany)|May 10, 2026
Sub-Nanometer Ferroelectric Tunnel Junctions With Record-High on-Current Density Through Synergistic Microwave Annealing and High-Field ActivationLaeyong Jung, Hojung Jang, Jongseon Seo, et al.
Scientific Reports|September 23, 2022
Solid state thin electrolyte to overcome transparency-capacity dilemma of transparent supercapacitorJongseon Seo, Geonhui Han, Hyejin Kim, et al.
Scientific Reports|August 31, 2023
Three-dimensional vertical structural electrochemical random access memory for high-density integrated synapse deviceHyejin Kim, Jongseon Seo, Seojin Cho, et al.
ACS Applied Materials & Interfaces|March 24, 2025
Strategic Material Design for Highly Reliable QLC 3D V-NAND Using Bypass Resistive Random Access MemoryGeonhui Han, Jongseon Seo, Junghoon Park, et al.
Scientific Reports|December 2, 2021
Alternative negative weight for simpler hardware implementation of synapse device based neuromorphic systemGeonhui Han, Chuljun Lee, Jae-Eun Lee, et al.
Micromachines|March 26, 2022
Ion-Driven Electrochemical Random-Access Memory-Based Synaptic Devices for Neuromorphic Computing Systems: A Mini-ReviewHeebum Kang, Jongseon Seo, Hyejin Kim, et al.
Pageof 1