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Mengwei Si

Showing results (1-10 of 30) with videos related to

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ACS Omega|August 29, 2019
β-Ga<sub>2</sub>O<sub>3</sub> Nanomembrane Negative Capacitance Field-Effect Transistors with Steep Subthreshold Slope for Wide Band Gap Logic ApplicationsMengwei Si, Lingming Yang, Hong Zhou, et al.
Microsystems & Nanoengineering|September 27, 2021
A tunable ferroelectric based unreleased RF resonatorYanbo He, Bichoy Bahr, Mengwei Si, et al.
ACS Nano|June 27, 2018
Ferroelectric Field-Effect Transistors Based on MoS<sub>2</sub> and CuInP<sub>2</sub>S<sub>6</sub> Two-Dimensional van der Waals HeterostructureMengwei Si, Pai-Ying Liao, Gang Qiu, et al.
Nano Letters|September 13, 2021
Bilayer Quantum Hall States in an n-Type Wide Tellurium Quantum WellChang Niu, Gang Qiu, Yixiu Wang, et al.
Nano Letters|May 8, 2018
Steep-Slope WSe<sub>2</sub> Negative Capacitance Field-Effect TransistorMengwei Si, Chunsheng Jiang, Wonil Chung, et al.
Advanced Materials (Deerfield Beach, Fla.)|January 15, 2015
Performance potential and limit of MoS2 transistorsXuefei Li, Lingming Yang, Mengwei Si, et al.
ACS Nano|August 25, 2020
Indium-Tin-Oxide Transistors with One Nanometer Thick Channel and Ferroelectric GatingMengwei Si, Joseph Andler, Xiao Lyu, et al.
Advanced Materials (Deerfield Beach, Fla.)|November 13, 2023
Review-Extremely Thin Amorphous Indium Oxide TransistorsAdam Charnas, Zhuocheng Zhang, Zehao Lin, et al.
Nature Nanotechnology|July 1, 2020
Quantum Hall effect of Weyl fermions in n-type semiconducting tellureneGang Qiu, Chang Niu, Yixiu Wang, et al.
Nano Letters|June 1, 2017
One-Dimensional van der Waals Material Tellurium: Raman Spectroscopy under Strain and Magneto-TransportYuchen Du, Gang Qiu, Yixiu Wang, et al.
Pageof 3

Showing results (1-10 of 30) with videos related to

Sort By:
Pageof 3
ACS Omega|August 29, 2019
β-Ga<sub>2</sub>O<sub>3</sub> Nanomembrane Negative Capacitance Field-Effect Transistors with Steep Subthreshold Slope for Wide Band Gap Logic ApplicationsMengwei Si, Lingming Yang, Hong Zhou, et al.
Microsystems & Nanoengineering|September 27, 2021
A tunable ferroelectric based unreleased RF resonatorYanbo He, Bichoy Bahr, Mengwei Si, et al.
ACS Nano|June 27, 2018
Ferroelectric Field-Effect Transistors Based on MoS<sub>2</sub> and CuInP<sub>2</sub>S<sub>6</sub> Two-Dimensional van der Waals HeterostructureMengwei Si, Pai-Ying Liao, Gang Qiu, et al.
Nano Letters|September 13, 2021
Bilayer Quantum Hall States in an n-Type Wide Tellurium Quantum WellChang Niu, Gang Qiu, Yixiu Wang, et al.
Nano Letters|May 8, 2018
Steep-Slope WSe<sub>2</sub> Negative Capacitance Field-Effect TransistorMengwei Si, Chunsheng Jiang, Wonil Chung, et al.
Advanced Materials (Deerfield Beach, Fla.)|January 15, 2015
Performance potential and limit of MoS2 transistorsXuefei Li, Lingming Yang, Mengwei Si, et al.
ACS Nano|August 25, 2020
Indium-Tin-Oxide Transistors with One Nanometer Thick Channel and Ferroelectric GatingMengwei Si, Joseph Andler, Xiao Lyu, et al.
Advanced Materials (Deerfield Beach, Fla.)|November 13, 2023
Review-Extremely Thin Amorphous Indium Oxide TransistorsAdam Charnas, Zhuocheng Zhang, Zehao Lin, et al.
Nature Nanotechnology|July 1, 2020
Quantum Hall effect of Weyl fermions in n-type semiconducting tellureneGang Qiu, Chang Niu, Yixiu Wang, et al.
Nano Letters|June 1, 2017
One-Dimensional van der Waals Material Tellurium: Raman Spectroscopy under Strain and Magneto-TransportYuchen Du, Gang Qiu, Yixiu Wang, et al.
Pageof 3