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Nano Letters|August 22, 2018
Quantum Transport and Band Structure Evolution under High Magnetic Field in Few-Layer TellureneGang Qiu, Yixiu Wang, Yifan Nie, et al.
Nature Nanotechnology|July 1, 2020
Quantum Hall effect of Weyl fermions in n-type semiconducting tellureneGang Qiu, Chang Niu, Yixiu Wang, et al.
ACS Nano|August 25, 2020
Indium-Tin-Oxide Transistors with One Nanometer Thick Channel and Ferroelectric GatingMengwei Si, Joseph Andler, Xiao Lyu, et al.
Advanced Materials (Deerfield Beach, Fla.)|November 13, 2023
Review-Extremely Thin Amorphous Indium Oxide TransistorsAdam Charnas, Zhuocheng Zhang, Zehao Lin, et al.
ACS Omega|January 1, 2026
Engineering Amorphous IGZO Thin-Film Transistors: The Role of Composition and Channel Thickness in Mobility-Threshold Voltage OptimizationTaehyun Kim, Hyeongjun Jang, Beomjin Park, et al.
Nanotechnology|December 1, 2021
First demonstration of robust tri-gateβ-Ga2O3nano-membrane field-effect transistorsHagyoul Bae, Tae Joon Park, Jinhyun Noh, et al.
ACS Nano|March 25, 2014
Phosphorene: an unexplored 2D semiconductor with a high hole mobilityHan Liu, Adam T Neal, Zhen Zhu, et al.
Nano Letters|April 2, 2026
Breakdown of Ohm's Law by Disorders in Low-Dimensional TransistorsChang Niu, Adam Charnas, Jian-Yu Lin, et al.
Nanotechnology|September 24, 2016
Surface chemistry of black phosphorus under a controlled oxidative environmentWei Luo, Dmitry Y Zemlyanov, Cory A Milligan, et al.
Nano Letters|April 14, 2023
Tunable Circular Photogalvanic and Photovoltaic Effect in 2D Tellurium with Different ChiralityChang Niu, Shouyuan Huang, Neil Ghosh, et al.
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