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Sangsig Kim

Showing results (71-80 of 97) with videos related to

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Small (Weinheim an Der Bergstrasse, Germany)|May 2, 2009
Enhancement-mode silicon nanowire field-effect transistors on plastic substratesEun-Ae Chung, Jamin Koo, Myeongwon Lee, et al.
Nanotechnology|December 30, 2016
Steep switching characteristics of single-gated feedback field-effect transistorsMinsuk Kim, Yoonjoong Kim, Doohyeok Lim, et al.
Nanotechnology|April 5, 2024
Gate-bias stability of triple-gated feedback field-effect transistors with silicon nanosheet channelsHyojoo Heo, Yunwoo Shin, Jaemin Son, et al.
Journal of Nanoscience and Nanotechnology|March 14, 2021
Effect of Ge Mole Fraction on Performance of Underlapped Gate-All-Around SiGe-Source Tunneling Field-Effect TransistorsJuhee Jeon, Young-Soo Park, Sola Woo, et al.
Journal of Nanoscience and Nanotechnology|November 12, 2013
The effect of trapped charge on silicon nanowire pseudo-MOSFETsIncheol Nam, Minsuk Kim, Syed Faraz Najam, et al.
Journal of Nanoscience and Nanotechnology|August 3, 2012
Synthesis and structural-optical properties of Ga-doped ZnO nanowires by hot-walled pulsed laser deposition methodKyoungwon Kim, Dong-Yun Lee, Dong-Hoon Park, et al.
Nanoscale Research Letters|October 12, 2011
Effects of silver impurity on the structural, electrical, and optical properties of ZnO nanowiresKyoungwon Kim, Pulak Chandra Debnath, Deuk-Hee Lee, et al.
Nanotechnology|February 22, 2021
Inverting logic-in-memory cells comprising silicon nanowire feedback field-effect transistorsYoung-Soo Park, Doohyeok Lim, Jaemin Son, et al.
ACS Applied Materials & Interfaces|September 9, 2011
Si-based flexible memristive systems constructed using top-down methodsTaeho Moon, Jeongmin Kang, Yong Han, et al.
Journal of Nanoscience and Nanotechnology|May 14, 2009
Electrical characteristics of floating-gate memory devices with titanium nanoparticles embedded in gate oxidesByoungjun Park, Kyoungah Cho, Junggwon Yun, et al.
Pageof 10

Showing results (71-80 of 97) with videos related to

Sort By:
Pageof 10
Small (Weinheim an Der Bergstrasse, Germany)|May 2, 2009
Enhancement-mode silicon nanowire field-effect transistors on plastic substratesEun-Ae Chung, Jamin Koo, Myeongwon Lee, et al.
Nanotechnology|December 30, 2016
Steep switching characteristics of single-gated feedback field-effect transistorsMinsuk Kim, Yoonjoong Kim, Doohyeok Lim, et al.
Nanotechnology|April 5, 2024
Gate-bias stability of triple-gated feedback field-effect transistors with silicon nanosheet channelsHyojoo Heo, Yunwoo Shin, Jaemin Son, et al.
Journal of Nanoscience and Nanotechnology|March 14, 2021
Effect of Ge Mole Fraction on Performance of Underlapped Gate-All-Around SiGe-Source Tunneling Field-Effect TransistorsJuhee Jeon, Young-Soo Park, Sola Woo, et al.
Journal of Nanoscience and Nanotechnology|November 12, 2013
The effect of trapped charge on silicon nanowire pseudo-MOSFETsIncheol Nam, Minsuk Kim, Syed Faraz Najam, et al.
Journal of Nanoscience and Nanotechnology|August 3, 2012
Synthesis and structural-optical properties of Ga-doped ZnO nanowires by hot-walled pulsed laser deposition methodKyoungwon Kim, Dong-Yun Lee, Dong-Hoon Park, et al.
Nanoscale Research Letters|October 12, 2011
Effects of silver impurity on the structural, electrical, and optical properties of ZnO nanowiresKyoungwon Kim, Pulak Chandra Debnath, Deuk-Hee Lee, et al.
Nanotechnology|February 22, 2021
Inverting logic-in-memory cells comprising silicon nanowire feedback field-effect transistorsYoung-Soo Park, Doohyeok Lim, Jaemin Son, et al.
ACS Applied Materials & Interfaces|September 9, 2011
Si-based flexible memristive systems constructed using top-down methodsTaeho Moon, Jeongmin Kang, Yong Han, et al.
Journal of Nanoscience and Nanotechnology|May 14, 2009
Electrical characteristics of floating-gate memory devices with titanium nanoparticles embedded in gate oxidesByoungjun Park, Kyoungah Cho, Junggwon Yun, et al.
Pageof 10