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Stefan Slesazeck

Showing results (1-10 of 21) with videos related to

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Nanotechnology|May 10, 2019
Nanoscale resistive switching memory devices: a reviewStefan Slesazeck, Thomas Mikolajick
ACS Applied Materials & Interfaces|June 28, 2018
Accumulative Polarization Reversal in Nanoscale Ferroelectric TransistorsHalid Mulaosmanovic, Thomas Mikolajick, Stefan Slesazeck
ACS Applied Electronic Materials|June 16, 2025
Effect of HZO Thickness Scaling in the Bilayer Ferroelectric Tunnel JunctionLuca Carpentieri, Thomas Mikolajick, Stefan Slesazeck
Advanced Materials (Deerfield Beach, Fla.)|August 26, 2022
From Ferroelectric Material Optimization to Neuromorphic DevicesThomas Mikolajick, Min Hyuk Park, Laura Begon-Lours, et al.
Nanoscale|November 16, 2018
Mimicking biological neurons with a nanoscale ferroelectric transistorHalid Mulaosmanovic, Elisabetta Chicca, Martin Bertele, et al.
Nanoscale|June 6, 2018
On the stabilization of ferroelectric negative capacitance in nanoscale devicesMichael Hoffmann, Milan Pešić, Stefan Slesazeck, et al.
Nano Letters|November 25, 2011
Reconfigurable silicon nanowire transistorsAndré Heinzig, Stefan Slesazeck, Franz Kreupl, et al.
Nanoscale|September 22, 2021
Ferroelectric transistors with asymmetric double gate for memory window exceeding 12 V and disturb-free readHalid Mulaosmanovic, Dominik Kleimaier, Stefan Dünkel, et al.
Nanotechnology|July 28, 2021
Ferroelectric field-effect transistors based on HfO<sub>2</sub>: a reviewHalid Mulaosmanovic, Evelyn T Breyer, Stefan Dünkel, et al.
Frontiers in Neuroscience|May 7, 2021
On Local Activity and Edge of Chaos in a NaMLab MemristorAlon Ascoli, Ahmet S Demirkol, Ronald Tetzlaff, et al.
Pageof 3

Showing results (1-10 of 21) with videos related to

Sort By:
Pageof 3
Nanotechnology|May 10, 2019
Nanoscale resistive switching memory devices: a reviewStefan Slesazeck, Thomas Mikolajick
ACS Applied Materials & Interfaces|June 28, 2018
Accumulative Polarization Reversal in Nanoscale Ferroelectric TransistorsHalid Mulaosmanovic, Thomas Mikolajick, Stefan Slesazeck
ACS Applied Electronic Materials|June 16, 2025
Effect of HZO Thickness Scaling in the Bilayer Ferroelectric Tunnel JunctionLuca Carpentieri, Thomas Mikolajick, Stefan Slesazeck
Advanced Materials (Deerfield Beach, Fla.)|August 26, 2022
From Ferroelectric Material Optimization to Neuromorphic DevicesThomas Mikolajick, Min Hyuk Park, Laura Begon-Lours, et al.
Nanoscale|November 16, 2018
Mimicking biological neurons with a nanoscale ferroelectric transistorHalid Mulaosmanovic, Elisabetta Chicca, Martin Bertele, et al.
Nanoscale|June 6, 2018
On the stabilization of ferroelectric negative capacitance in nanoscale devicesMichael Hoffmann, Milan Pešić, Stefan Slesazeck, et al.
Nano Letters|November 25, 2011
Reconfigurable silicon nanowire transistorsAndré Heinzig, Stefan Slesazeck, Franz Kreupl, et al.
Nanoscale|September 22, 2021
Ferroelectric transistors with asymmetric double gate for memory window exceeding 12 V and disturb-free readHalid Mulaosmanovic, Dominik Kleimaier, Stefan Dünkel, et al.
Nanotechnology|July 28, 2021
Ferroelectric field-effect transistors based on HfO<sub>2</sub>: a reviewHalid Mulaosmanovic, Evelyn T Breyer, Stefan Dünkel, et al.
Frontiers in Neuroscience|May 7, 2021
On Local Activity and Edge of Chaos in a NaMLab MemristorAlon Ascoli, Ahmet S Demirkol, Ronald Tetzlaff, et al.
Pageof 3