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ACS Nano
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February 20, 2018
Highly Sensitive Bulk Silicon Chemical Sensors with Sub-5 nm Thin Charge Inversion Layers
Hossain M Fahad, Niharika Gupta, Rui Han, et al.
Nano Letters
|
September 19, 2019
Gate Quantum Capacitance Effects in Nanoscale Transistors
Sujay B Desai, Hossain M Fahad, Theodor Lundberg, et al.
ACS Nano
|
May 1, 2014
Field-effect transistors built from all two-dimensional material components
Tania Roy, Mahmut Tosun, Jeong Seuk Kang, et al.
Nano Letters
|
July 3, 2014
Strain-induced indirect to direct bandgap transition in multilayer WSe2
Sujay B Desai, Gyungseon Seol, Jeong Seuk Kang, et al.
Scientific Reports
|
July 1, 2015
MoS2 Heterojunctions by Thickness Modulation
Mahmut Tosun, Deyi Fu, Sujay B Desai, et al.
Nature Communications
|
March 28, 2018
Large-area and bright pulsed electroluminescence in monolayer semiconductors
Der-Hsien Lien, Matin Amani, Sujay B Desai, et al.
Advanced Materials (Deerfield Beach, Fla.)
|
March 24, 2016
Gold-Mediated Exfoliation of Ultralarge Optoelectronically-Perfect Monolayers
Sujay B Desai, Surabhi R Madhvapathy, Matin Amani, et al.
Science (New York, N.Y.)
|
November 16, 2016
MoS2 transistors with 1-nanometer gate lengths
Sujay B Desai, Surabhi R Madhvapathy, Angada B Sachid, et al.
Advanced Materials (Deerfield Beach, Fla.)
|
February 3, 2016
Monolithic 3D CMOS Using Layered Semiconductors
Angada B Sachid, Mahmut Tosun, Sujay B Desai, et al.
Proceedings of the National Academy of Sciences of the United States of America
|
April 16, 2014
Strong interlayer coupling in van der Waals heterostructures built from single-layer chalcogenides
Hui Fang, Corsin Battaglia, Carlo Carraro, et al.
Page
of 1
Search research articles
Search
Showing results (1-10 of 10) with videos related to
Sort By:
Page
of 1
ACS Nano
|
February 20, 2018
Highly Sensitive Bulk Silicon Chemical Sensors with Sub-5 nm Thin Charge Inversion Layers
Hossain M Fahad, Niharika Gupta, Rui Han, et al.
Nano Letters
|
September 19, 2019
Gate Quantum Capacitance Effects in Nanoscale Transistors
Sujay B Desai, Hossain M Fahad, Theodor Lundberg, et al.
ACS Nano
|
May 1, 2014
Field-effect transistors built from all two-dimensional material components
Tania Roy, Mahmut Tosun, Jeong Seuk Kang, et al.
Nano Letters
|
July 3, 2014
Strain-induced indirect to direct bandgap transition in multilayer WSe2
Sujay B Desai, Gyungseon Seol, Jeong Seuk Kang, et al.
Scientific Reports
|
July 1, 2015
MoS2 Heterojunctions by Thickness Modulation
Mahmut Tosun, Deyi Fu, Sujay B Desai, et al.
Nature Communications
|
March 28, 2018
Large-area and bright pulsed electroluminescence in monolayer semiconductors
Der-Hsien Lien, Matin Amani, Sujay B Desai, et al.
Advanced Materials (Deerfield Beach, Fla.)
|
March 24, 2016
Gold-Mediated Exfoliation of Ultralarge Optoelectronically-Perfect Monolayers
Sujay B Desai, Surabhi R Madhvapathy, Matin Amani, et al.
Science (New York, N.Y.)
|
November 16, 2016
MoS2 transistors with 1-nanometer gate lengths
Sujay B Desai, Surabhi R Madhvapathy, Angada B Sachid, et al.
Advanced Materials (Deerfield Beach, Fla.)
|
February 3, 2016
Monolithic 3D CMOS Using Layered Semiconductors
Angada B Sachid, Mahmut Tosun, Sujay B Desai, et al.
Proceedings of the National Academy of Sciences of the United States of America
|
April 16, 2014
Strong interlayer coupling in van der Waals heterostructures built from single-layer chalcogenides
Hui Fang, Corsin Battaglia, Carlo Carraro, et al.
Page
of 1