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Taiping Lu

Showing results (1-10 of 22) with videos related to

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Nanomaterials (Basel, Switzerland)|February 14, 2020
Facile Preparation of Stable Solid-State Carbon Quantum Dots with Multi-Peak EmissionYanning Zheng, Jingxia Zheng, Junli Wang, et al.
Optics Express|November 11, 2025
Real-time two-bounce non-line-of-sight object tracking via dual-view collaborative perception networkJingyuan Zhang, Bochao Zhang, Taiping Lu, et al.
Advanced Materials (Deerfield Beach, Fla.)|January 6, 2022
Smart Adhesives via Magnetic ActuationJinsheng Zhao, Xiangyu Li, Yu Tan, et al.
Nanoscale|March 2, 2016
Influence of substrate misorientation on the photoluminescence and structural properties of InGaAs/GaAsP multiple quantum wellsHailiang Dong, Jing Sun, Shufang Ma, et al.
Nanoscale Research Letters|May 6, 2017
Effect of hydrogen treatment temperature on the properties of InGaN/GaN multiple quantum wellsYadan Zhu, Taiping Lu, Xiaorun Zhou, et al.
Physical Chemistry Chemical Physics : PCCP|February 17, 2016
Effect of potential barrier height on the carrier transport in InGaAs/GaAsP multi-quantum wells and photoelectric properties of laser diodeHailiang Dong, Jing Sun, Shufang Ma, et al.
Nanoscale Research Letters|May 18, 2017
Surface Morphology Evolution Mechanisms of InGaN/GaN Multiple Quantum Wells with Mixture N<sub>2</sub>/H<sub>2</sub>-Grown GaN BarrierXiaorun Zhou, Taiping Lu, Yadan Zhu, et al.
RSC Advances|May 6, 2022
Improving the internal quantum efficiency of QD/QW hybrid structures by increasing the GaN barrier thicknessZhigang Jia, Xiaodong Hao, Taiping Lu, et al.
Optics Express|September 22, 2011
Effect of the thickness of undoped GaN interlayers between multiple quantum wells and the p-doped layer on the performance of GaN light-emitting diodesTaiping Lu, Shuti Li, Kang Zhang, et al.
Optics Express|April 4, 2024
Highly stable mixed-phase Cs-Cu-I films with tunable optoelectronic properties for UVB photodetector applicationsTian Dan, Shunli He, Lichun Zhang, et al.
Pageof 3

Showing results (1-10 of 22) with videos related to

Sort By:
Pageof 3
Nanomaterials (Basel, Switzerland)|February 14, 2020
Facile Preparation of Stable Solid-State Carbon Quantum Dots with Multi-Peak EmissionYanning Zheng, Jingxia Zheng, Junli Wang, et al.
Optics Express|November 11, 2025
Real-time two-bounce non-line-of-sight object tracking via dual-view collaborative perception networkJingyuan Zhang, Bochao Zhang, Taiping Lu, et al.
Advanced Materials (Deerfield Beach, Fla.)|January 6, 2022
Smart Adhesives via Magnetic ActuationJinsheng Zhao, Xiangyu Li, Yu Tan, et al.
Nanoscale|March 2, 2016
Influence of substrate misorientation on the photoluminescence and structural properties of InGaAs/GaAsP multiple quantum wellsHailiang Dong, Jing Sun, Shufang Ma, et al.
Nanoscale Research Letters|May 6, 2017
Effect of hydrogen treatment temperature on the properties of InGaN/GaN multiple quantum wellsYadan Zhu, Taiping Lu, Xiaorun Zhou, et al.
Physical Chemistry Chemical Physics : PCCP|February 17, 2016
Effect of potential barrier height on the carrier transport in InGaAs/GaAsP multi-quantum wells and photoelectric properties of laser diodeHailiang Dong, Jing Sun, Shufang Ma, et al.
Nanoscale Research Letters|May 18, 2017
Surface Morphology Evolution Mechanisms of InGaN/GaN Multiple Quantum Wells with Mixture N<sub>2</sub>/H<sub>2</sub>-Grown GaN BarrierXiaorun Zhou, Taiping Lu, Yadan Zhu, et al.
RSC Advances|May 6, 2022
Improving the internal quantum efficiency of QD/QW hybrid structures by increasing the GaN barrier thicknessZhigang Jia, Xiaodong Hao, Taiping Lu, et al.
Optics Express|September 22, 2011
Effect of the thickness of undoped GaN interlayers between multiple quantum wells and the p-doped layer on the performance of GaN light-emitting diodesTaiping Lu, Shuti Li, Kang Zhang, et al.
Optics Express|April 4, 2024
Highly stable mixed-phase Cs-Cu-I films with tunable optoelectronic properties for UVB photodetector applicationsTian Dan, Shunli He, Lichun Zhang, et al.
Pageof 3