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Nanoscale|April 22, 2015
Nanoscale elemental quantification in heterostructured SiGe nanowiresW Hourani, P Periwal, F Bassani, et al.Nanotechnology|June 6, 2018
Growth dynamics of SiGe nanowires by the vapour-liquid-solid method and its impact on SiGe/Si axial heterojunction abruptnessJ L Pura, P Periwal, T Baron, et al.Ultramicroscopy|November 3, 2020
Experimental quantification of atomically-resolved HAADF-STEM images using EDXK Pantzas, G PatriarcheMicron (Oxford, England : 1993)|August 12, 2006
TEM-nanoindentation studies of semiconducting structuresE Le Bourhis, G PatriarchePhysical Review Letters|September 28, 2004
Determination of the local concentrations of Mn interstitials and antisite defects in GaMnAsF Glas, G Patriarche, L Largeau, et al.Nanotechnology|November 29, 2019
Kinetic study of hydrogen lateral diffusion at high temperature in a directly-bonded InP-SiO2/Si substrateC Besancon, F Fournel, L Sanchez, et al.Nanotechnology|May 20, 2020
Density-controlled growth of vertical InP nanowires on Si(111) substratesA Jaffal, P Regreny, G Patriarche, et al.Neural Networks : the Official Journal of the International Neural Network Society|June 14, 2019
A neural network architecture for learning word-referent associations in multiple contextsHansenclever F Bassani, Aluizio F R AraujoPhysical Review. E, Statistical, Nonlinear, and Soft Matter Physics|December 31, 2005
Resonantly absorbing one-dimensional photonic crystalsM Artoni, G La Rocca, F BassaniPageof 177