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Nanomaterials (Basel, Switzerland)
|
April 13, 2023
Plasma Nitridation Effect on <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> Semiconductors
Sunjae Kim, Minje Kim, Jihyun Kim, et al.
ACS Omega
|
November 16, 2023
Wide-Range Synaptic Current Responses with a Liquid Ga Electrode via a Surface Redox Reaction in a NaOH Solution at Different Molar Concentrations
Dahee Seo, Seongyeon Kang, Heejoong Ryou, et al.
Sensors (Basel, Switzerland)
|
January 12, 2021
Fast-Response Colorimetric UVC Sensor Made of a Ga<sub>2</sub>O<sub>3</sub> Photocatalyst with a Hole Scavenger
Heejoong Ryou, Sunjae Kim, Myunghun Shin, et al.
Scientific Reports
|
June 28, 2016
Corrigendum: Improved Drain Current Saturation and Voltage Gain in Graphene-on-Silicon Field Effect Transistors
Seung Min Song, Jae Hoon Bong, Wan Sik Hwang, et al.
Nanomaterials (Basel, Switzerland)
|
December 30, 2020
Highly Aligned Polymeric Nanowire Etch-Mask Lithography Enabling the Integration of Graphene Nanoribbon Transistors
Sangheon Jeon, Pyunghwa Han, Jeonghwa Jeong, et al.
Small (Weinheim an Der Bergstrasse, Germany)
|
October 27, 2016
Vertically Formed Graphene Stripe for 3D Field-Effect Transistor Applications
Seul Ki Hong, Jae Hoon Bong, Byung Jin Cho, et al.
Scientific Reports
|
May 5, 2016
Improved Drain Current Saturation and Voltage Gain in Graphene-on-Silicon Field Effect Transistors
Seung Min Song, Jae Hoon Bong, Wan Sik Hwang, et al.
Scientific Reports
|
July 9, 2016
Valley-engineered ultra-thin silicon for high-performance junctionless transistors
Seung-Yoon Kim, Sung-Yool Choi, Wan Sik Hwang, et al.
ACS Nano
|
July 13, 2016
Hybrid Integration of Graphene Analog and Silicon Complementary Metal-Oxide-Semiconductor Digital Circuits
Seul Ki Hong, Choong Sun Kim, Wan Sik Hwang, et al.
ACS Applied Materials & Interfaces
|
September 20, 2018
Novel Vapor-Phase Synthesis of Flexible, Homogeneous Organic-Inorganic Hybrid Gate Dielectric with sub 5 nm Equivalent Oxide Thickness
Min Ju Kim, Kwanyong Pak, Wan Sik Hwang, et al.
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Search research articles
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Showing results (1-10 of 30) with videos related to
Sort By:
Page
of 3
Nanomaterials (Basel, Switzerland)
|
April 13, 2023
Plasma Nitridation Effect on <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> Semiconductors
Sunjae Kim, Minje Kim, Jihyun Kim, et al.
ACS Omega
|
November 16, 2023
Wide-Range Synaptic Current Responses with a Liquid Ga Electrode via a Surface Redox Reaction in a NaOH Solution at Different Molar Concentrations
Dahee Seo, Seongyeon Kang, Heejoong Ryou, et al.
Sensors (Basel, Switzerland)
|
January 12, 2021
Fast-Response Colorimetric UVC Sensor Made of a Ga<sub>2</sub>O<sub>3</sub> Photocatalyst with a Hole Scavenger
Heejoong Ryou, Sunjae Kim, Myunghun Shin, et al.
Scientific Reports
|
June 28, 2016
Corrigendum: Improved Drain Current Saturation and Voltage Gain in Graphene-on-Silicon Field Effect Transistors
Seung Min Song, Jae Hoon Bong, Wan Sik Hwang, et al.
Nanomaterials (Basel, Switzerland)
|
December 30, 2020
Highly Aligned Polymeric Nanowire Etch-Mask Lithography Enabling the Integration of Graphene Nanoribbon Transistors
Sangheon Jeon, Pyunghwa Han, Jeonghwa Jeong, et al.
Small (Weinheim an Der Bergstrasse, Germany)
|
October 27, 2016
Vertically Formed Graphene Stripe for 3D Field-Effect Transistor Applications
Seul Ki Hong, Jae Hoon Bong, Byung Jin Cho, et al.
Scientific Reports
|
May 5, 2016
Improved Drain Current Saturation and Voltage Gain in Graphene-on-Silicon Field Effect Transistors
Seung Min Song, Jae Hoon Bong, Wan Sik Hwang, et al.
Scientific Reports
|
July 9, 2016
Valley-engineered ultra-thin silicon for high-performance junctionless transistors
Seung-Yoon Kim, Sung-Yool Choi, Wan Sik Hwang, et al.
ACS Nano
|
July 13, 2016
Hybrid Integration of Graphene Analog and Silicon Complementary Metal-Oxide-Semiconductor Digital Circuits
Seul Ki Hong, Choong Sun Kim, Wan Sik Hwang, et al.
ACS Applied Materials & Interfaces
|
September 20, 2018
Novel Vapor-Phase Synthesis of Flexible, Homogeneous Organic-Inorganic Hybrid Gate Dielectric with sub 5 nm Equivalent Oxide Thickness
Min Ju Kim, Kwanyong Pak, Wan Sik Hwang, et al.
Page
of 3