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Wu-Xi Lin

Showing results (1-10 of 8) with videos related to

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Reports on Progress in Physics. Physical Society (Great Britain)|November 29, 2023
Quantum systems in silicon carbide for sensing applicationsS Castelletto, C T-K Lew, Wu-Xi Lin, et al.
Nanoscale|February 22, 2023
Magnetic-field-dependent spin properties of divacancy defects in silicon carbideFei-Fei Yan, Jun-Feng Wang, Zhen-Xuan He, et al.
Nano Letters|February 12, 2026
Charge-State Control of Modified Divacancies in Silicon CarbideWu-Xi Lin, Qi-Cheng Hu, Zhi-He Hao, et al.
Advanced Materials (Deerfield Beach, Fla.)|May 16, 2026
High-Yield Engineering and Identification of Oxygen-Related Modified Divacancies in 4H-SiCQi-Cheng Hu, Ji-Yang Zhou, Shuo Ren, et al.
Nano Letters|May 8, 2023
Plasmonic-Enhanced Bright Single Spin Defects in Silicon Carbide MembranesJi-Yang Zhou, Qiang Li, Zhi-He Hao, et al.
Nature Communications|November 23, 2024
Robust single modified divacancy color centers in 4H-SiC under resonant excitationZhen-Xuan He, Ji-Yang Zhou, Qiang Li, et al.
Nature Materials|March 24, 2023
Magnetic detection under high pressures using designed silicon vacancy centres in silicon carbideJun-Feng Wang, Lin Liu, Xiao-Di Liu, et al.
Nano Letters|December 12, 2022
Coherent Control and Magnetic Detection of Divacancy Spins in Silicon Carbide at High PressuresLin Liu, Jun-Feng Wang, Xiao-Di Liu, et al.
Pageof 1

Showing results (1-10 of 8) with videos related to

Sort By:
Pageof 1
Reports on Progress in Physics. Physical Society (Great Britain)|November 29, 2023
Quantum systems in silicon carbide for sensing applicationsS Castelletto, C T-K Lew, Wu-Xi Lin, et al.
Nanoscale|February 22, 2023
Magnetic-field-dependent spin properties of divacancy defects in silicon carbideFei-Fei Yan, Jun-Feng Wang, Zhen-Xuan He, et al.
Nano Letters|February 12, 2026
Charge-State Control of Modified Divacancies in Silicon CarbideWu-Xi Lin, Qi-Cheng Hu, Zhi-He Hao, et al.
Advanced Materials (Deerfield Beach, Fla.)|May 16, 2026
High-Yield Engineering and Identification of Oxygen-Related Modified Divacancies in 4H-SiCQi-Cheng Hu, Ji-Yang Zhou, Shuo Ren, et al.
Nano Letters|May 8, 2023
Plasmonic-Enhanced Bright Single Spin Defects in Silicon Carbide MembranesJi-Yang Zhou, Qiang Li, Zhi-He Hao, et al.
Nature Communications|November 23, 2024
Robust single modified divacancy color centers in 4H-SiC under resonant excitationZhen-Xuan He, Ji-Yang Zhou, Qiang Li, et al.
Nature Materials|March 24, 2023
Magnetic detection under high pressures using designed silicon vacancy centres in silicon carbideJun-Feng Wang, Lin Liu, Xiao-Di Liu, et al.
Nano Letters|December 12, 2022
Coherent Control and Magnetic Detection of Divacancy Spins in Silicon Carbide at High PressuresLin Liu, Jun-Feng Wang, Xiao-Di Liu, et al.
Pageof 1