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Xavier Jehl

Showing results (1-10 of 9) with videos related to

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Journal of Physics. Condensed Matter : an Institute of Physics Journal|February 13, 2016
Single donor electronics and quantum functionalities with advanced CMOS technologyXavier Jehl, Yann-Michel Niquet, Marc Sanquer
Nanotechnology|August 3, 2018
CMOS platform for atomic-scale device fabricationTomáš Škereň, Nikola Pascher, Arnaud Garnier, et al.
Nano Letters|April 30, 2015
Quantum dot made in metal oxide silicon-nanowire field effect transistor working at room temperatureRomain Lavieville, François Triozon, Sylvain Barraud, et al.
Scientific Reports|February 24, 2022
Gate reflectometry of single-electron box arrays using calibrated low temperature matching networksMatthew J Filmer, Matthew Huebner, Thomas A Zirkle, et al.
Nano Letters|March 12, 2014
Few-electron edge-state quantum dots in a silicon nanowire field-effect transistorBenoit Voisin, Viet-Hung Nguyen, Julien Renard, et al.
Nano Letters|January 13, 2017
Level Spectrum and Charge Relaxation in a Silicon Double Quantum Dot Probed by Dual-Gate ReflectometryAlessandro Crippa, Romain Maurand, Dharmraj Kotekar-Patil, et al.
Physical Review Letters|April 26, 2018
Electrical Spin Driving by g-Matrix Modulation in Spin-Orbit QubitsAlessandro Crippa, Romain Maurand, Léo Bourdet, et al.
Nature Nanotechnology|May 16, 2019
Gate-based high fidelity spin readout in a CMOS deviceMatias Urdampilleta, David J Niegemann, Emmanuel Chanrion, et al.
Nanotechnology|May 4, 2012
Few electron limit of n-type metal oxide semiconductor single electron transistorsEnrico Prati, Marco De Michielis, Matteo Belli, et al.
Pageof 1

Showing results (1-10 of 9) with videos related to

Sort By:
Pageof 1
Journal of Physics. Condensed Matter : an Institute of Physics Journal|February 13, 2016
Single donor electronics and quantum functionalities with advanced CMOS technologyXavier Jehl, Yann-Michel Niquet, Marc Sanquer
Nanotechnology|August 3, 2018
CMOS platform for atomic-scale device fabricationTomáš Škereň, Nikola Pascher, Arnaud Garnier, et al.
Nano Letters|April 30, 2015
Quantum dot made in metal oxide silicon-nanowire field effect transistor working at room temperatureRomain Lavieville, François Triozon, Sylvain Barraud, et al.
Scientific Reports|February 24, 2022
Gate reflectometry of single-electron box arrays using calibrated low temperature matching networksMatthew J Filmer, Matthew Huebner, Thomas A Zirkle, et al.
Nano Letters|March 12, 2014
Few-electron edge-state quantum dots in a silicon nanowire field-effect transistorBenoit Voisin, Viet-Hung Nguyen, Julien Renard, et al.
Nano Letters|January 13, 2017
Level Spectrum and Charge Relaxation in a Silicon Double Quantum Dot Probed by Dual-Gate ReflectometryAlessandro Crippa, Romain Maurand, Dharmraj Kotekar-Patil, et al.
Physical Review Letters|April 26, 2018
Electrical Spin Driving by g-Matrix Modulation in Spin-Orbit QubitsAlessandro Crippa, Romain Maurand, Léo Bourdet, et al.
Nature Nanotechnology|May 16, 2019
Gate-based high fidelity spin readout in a CMOS deviceMatias Urdampilleta, David J Niegemann, Emmanuel Chanrion, et al.
Nanotechnology|May 4, 2012
Few electron limit of n-type metal oxide semiconductor single electron transistorsEnrico Prati, Marco De Michielis, Matteo Belli, et al.
Pageof 1