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Xiang-Wei Jiang

Showing results (1-10 of 7) with videos related to

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Physical Chemistry Chemical Physics : PCCP|July 21, 2017
Ab initio performance predictions of single-layer In-V tunnel field-effect transistorsJuan Lu, Zhi-Qiang Fan, Jian Gong, et al.
ACS Applied Materials & Interfaces|May 9, 2018
Improving Performances of In-Plane Transition-Metal Dichalcogenide Schottky Barrier Field-Effect TransistorsZhi-Qiang Fan, Xiang-Wei Jiang, Jiezhi Chen, et al.
Journal of Chemical Theory and Computation|May 5, 2016
Petascale Orbital-Free Density Functional Theory Enabled by Small-Box AlgorithmsMohan Chen, Xiang-Wei Jiang, Houlong Zhuang, et al.
Nanoscale|October 17, 2018
Large tunneling magnetoresistance in magnetic tunneling junctions based on two-dimensional CrX<sub>3</sub> (X = Br, I) monolayersLongfei Pan, Le Huang, Mianzeng Zhong, et al.
Journal of the American Chemical Society|September 20, 2017
Short-Wave Near-Infrared Linear Dichroism of Two-Dimensional Germanium SelenideXiaoting Wang, Yongtao Li, Le Huang, et al.
Physical Chemistry Chemical Physics : PCCP|February 8, 2018
Enhancement of tunneling current in phosphorene tunnel field effect transistors by surface defectsJuan Lu, Zhi-Qiang Fan, Jian Gong, et al.
Nature Communications|October 19, 2017
Gate-controlled reversible rectifying behaviour in tunnel contacted atomically-thin MoS<sub>2</sub> transistorXiao-Xi Li, Zhi-Qiang Fan, Pei-Zhi Liu, et al.
Pageof 1

Showing results (1-10 of 7) with videos related to

Sort By:
Pageof 1
Physical Chemistry Chemical Physics : PCCP|July 21, 2017
Ab initio performance predictions of single-layer In-V tunnel field-effect transistorsJuan Lu, Zhi-Qiang Fan, Jian Gong, et al.
ACS Applied Materials & Interfaces|May 9, 2018
Improving Performances of In-Plane Transition-Metal Dichalcogenide Schottky Barrier Field-Effect TransistorsZhi-Qiang Fan, Xiang-Wei Jiang, Jiezhi Chen, et al.
Journal of Chemical Theory and Computation|May 5, 2016
Petascale Orbital-Free Density Functional Theory Enabled by Small-Box AlgorithmsMohan Chen, Xiang-Wei Jiang, Houlong Zhuang, et al.
Nanoscale|October 17, 2018
Large tunneling magnetoresistance in magnetic tunneling junctions based on two-dimensional CrX<sub>3</sub> (X = Br, I) monolayersLongfei Pan, Le Huang, Mianzeng Zhong, et al.
Journal of the American Chemical Society|September 20, 2017
Short-Wave Near-Infrared Linear Dichroism of Two-Dimensional Germanium SelenideXiaoting Wang, Yongtao Li, Le Huang, et al.
Physical Chemistry Chemical Physics : PCCP|February 8, 2018
Enhancement of tunneling current in phosphorene tunnel field effect transistors by surface defectsJuan Lu, Zhi-Qiang Fan, Jian Gong, et al.
Nature Communications|October 19, 2017
Gate-controlled reversible rectifying behaviour in tunnel contacted atomically-thin MoS<sub>2</sub> transistorXiao-Xi Li, Zhi-Qiang Fan, Pei-Zhi Liu, et al.
Pageof 1