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Nature Communications|July 9, 2024
High-density vertical sidewall MoS2 transistors through T-shape vertical laminationQuanyang Tao, Ruixia Wu, Xuming Zou, et al.Nature|May 22, 2024
Monolithic three-dimensional tier-by-tier integration via van der Waals laminationDonglin Lu, Yang Chen, Zheyi Lu, et al.Nature Communications|September 3, 2024
Large-scale sub-5-nm vertical transistors by van der Waals integrationXiaokun Yang, Rui He, Zheyi Lu, et al.Small (Weinheim an Der Bergstrasse, Germany)|February 17, 2022
Strain-Plasmonic Coupled Broadband Photodetector Based on Monolayer MoS2Donglin Lu, Yang Chen, Lingan Kong, et al.Nano Letters|May 26, 2022
Realization of Ultra-Scaled MoS2 Vertical Diodes via Double-Side Electrodes LaminationWanying Li, Liting Liu, Quanyang Tao, et al.Nature Communications|February 24, 2023
Wafer-scale and universal van der Waals metal semiconductor contactLingan Kong, Ruixia Wu, Yang Chen, et al.Pageof 3